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參數(shù)資料
| 型號(hào)： | WSE128K16-XG2TX |
| 英文描述： | SRAM/EEPROM MCP |
| 中文描述： | 的SRAM / EEPROM的MCP的 |
| 文件頁(yè)數(shù)： | 3/15頁(yè) |
| 文件大小： | 158K |
| 代理商： | WSE128K16-XG2TX |
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3
WSE128K16-XXX
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EEPROM TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
CS
H
L
L
X
X
X
OE
X
L
H
H
X
L
WE
X
H
L
X
H
X
Mode
Standby
Read
Write
Out Disable
Write
Inhibit
Data I/O
High Z
Data Out
Data In
High Z/Data Out
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.0
-0.3
-55
Max
5.5
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
DC CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Symbol
I
LI
I
LO
Conditions
Min
Max
10
10
Unit
μ
A
μ
A
mA
mA
V
V
V
CC
= 5.5, V
IN
= GND to V
CC
SCS = V
IH
, OE = V
IH,
V
OUT
= GND to V
CC
SRAM Operating Supply Current x 16 Mode
Standby Current
I
CCx16
I
SB
V
OL
V
OL
SCS = V
IL
, OE = ECS = V
IH,
f = 5MHz, V
CC
= 5.5
ECS = SCS = V
IH
, OE = V
IH,
f = 5MHz, V
CC
= 5.5
I
OL
= 8.0mA, V
CC
= 4.5
I
OL
= 2.1mA, V
CC
= 4.5
360
31.2
0.4
0.4
SRAM Output Low Voltage
(35 to 45ns)
(70ns)
SRAM Output High Voltage
(35 to 45ns)
(70ns)
V
OH
V
OH
I
CC1
V
OL
I
OH
= -4.0mA, V
CC
= 4.5
I
OH
= -1mA, V
CC
= 4.5
ECS = V
IL
, OE = SCS = V
IH
I
OL
= 2.1 mA, V
CC
= 4.5V
I
OH
= 400
μ
A, V
CC
= 4.5V
2.4
2.4
V
V
EEPROM Operating Supply Current x 16 Mode
EEPROM Output Low Voltage
155
0.45
mA
V
EEPROM Output High Voltage
V
OH1
2.4
V
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at V
IH
.
2. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
7.0
Unit
°
C
°
C
V
°
C
V
-0.5
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
WE
1-4
capacitance
HIP (PGA)
CQFP G2T
CS
1-4
capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
OE
C
WE
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
50
Unit
pF
pF
20
20
20
20
50
C
CS
C
I/O
C
AD
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
pF
pF
pF
SRAM TRUTH TABLE
SCS
H
L
L
L
OE
X
L
H
X
SWE
X
H
H
L
Mode
Standby
Read
Read
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
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| WSE128K16-XH1X | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:SRAM/EEPROM MCP |
| WSE128K16-XXX | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
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