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參數(shù)資料
| 型號： | WS1M32-17G3X |
| 英文描述： | 1Mx32 SRAM Module(1Mx32靜態(tài)RAM模塊（存取時間17ns）) |
| 中文描述： | 1Mx32的SRAM模塊（1Mx32靜態(tài)內(nèi)存模塊（存取時間17ns）） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 150K |
| 代理商： | WS1M32-17G3X |
2
White Microelectronics Phoenix, AZ (602) 437-1520
4
S
TRUTH TABLE
CS
1
H
L
L
L
H
H
H
L
CS
2
H
H
H
H
L
L
L
L
OE
X
L
H
X
L
H
X
X
WE
X
H
H
L
H
H
L
X
Mode
Standby
Read
Out Disable
Write
Read
Out Disable
Write
Invalid State Invalid State Invalid State
Data I/O
High Z
Data Out
High Z
Data In
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
Active
Active
Active
WS1M32-XG3X
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
Vcc + 0.5
150
7.0
Unit
°
C
°
C
V
°
C
V
-0.5
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
Operating Temp (Ind.)
Symbol
V
CC
V
IH
V
IL
T
A
T
A
Min
4.5
2.2
-0.5
-55
-40
Max
5.5
Unit
V
V
V
°
C
°
C
V
CC
+ 0.3
+0.8
+125
+85
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE
1-4
capacitance
WE
1-4
capacitance
CS
1-2
capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
30
30
30
30
100
Unit
pF
pF
pF
pF
pF
Parameter
Symbol
Conditions
Units
Min
Max
10
10
600
120
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current x 32 Mode
Standby Current
Output Low Voltage
Output High Voltage
I
LI
I
LO
V
CC
= 5.5, V
IN
= G
ND
to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 8mA, Vcc = 4.5
I
OH
= -4.0mA, Vcc = 4.5
μ
A
μ
A
mA
mA
V
V
I
CC x 32
I
SB
V
OL
V
OH
2.4
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
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