參數(shù)資料
型號： WED9LC6416V1510BI
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA153
封裝： MO-163, BGA-153
文件頁數(shù)： 4/27頁
文件大?。?/td> 334K
代理商： WED9LC6416V1510BI
12
White Electronic Designs Corporation Westborough, MA (508) 366-5151
White Electronic Designs
WED9LC6416V
SDRAM CURRENT STATE TRUTH TABLE (CONT.)
Command
Current State SDCE SDRAS SDCAS SDWE A12&A13
A11-A0
Description
Action
Notes
(BA)
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto or Self Refresh
ILLEGAL
L
H
L
X
Precharge
ILLEGAL
2
Write with
L
H
BA
Row Address
Bank Activate
ILLEGAL
2
Auto Precharge
L
H
L
BA
Column
Write
ILLEGAL
L
H
L
H
BA
Column
Read
ILLEGAL
L
H
L
X
Burst Termination
ILLEGAL
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto or Self Refresh
ILLEGAL
L
H
L
X
Precharge
No Operation; Bank(s) idle after tRP
L
H
BA
Row Address
Bank Activate
ILLEGAL
2
Precharging
L
H
L
BA
Column
Write w/o Precharge
ILLEGAL
2
L
H
L
H
BA
Column
Read w/o Precharge
ILLEGAL
L
H
L
X
Burst Termination
No Operation; Bank(s) idle after tRP
L
H
X
No Operation
No Operation; Bank(s) idle after tRP
H
X
Device Deselect
No Operation; Bank(s) idle after tRP
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto or Self Refresh
ILLEGAL
L
H
L
X
Precharge
ILLEGAL
2
L
H
BA
Row Address
Bank Activate
ILLEGAL
2
Row Activating
L
H
L
BA
Column
Write
ILLEGAL
2
L
H
L
H
BA
Column
Read
ILLEGAL
2
L
H
L
X
Burst Termination
No Operation; Row active after tRCD
L
H
X
No Operation
No Operation; Row active after tRCD
H
X
Device Deselect
No Operation; Row active after tRCD
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto orSelf Refresh
ILLEGAL
L
H
L
X
Precharge
ILLEGAL
2
L
H
BA
Row Address
Bank Activate
ILLEGAL
2
Write Recovering
L
H
L
BA
Column
Write
Start Write; Determine if Auto Precharge
6
L
H
L
H
BA
Column
Read
Start Read; Determine if Auto Precharge
6
L
H
L
X
Burst Termination
No Operation; Row active after tDPL
L
H
X
No Operation
No Operation; Row active after tDPL
H
X
Device Deselect
No Operation; Row active after tDPL
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto orSelf Refresh
ILLEGAL
L
H
L
X
Precharge
ILLEGAL
2
Write Recovering
L
H
BA
Row Address
Bank Activate
ILLEGAL
2
with Auto
L
H
L
BA
Column
Write
ILLEGAL
2,6
Precharge
L
H
L
H
BA
Column
Read
ILLEGAL
2,6
L
H
L
X
Burst Termination
No Operation; Precharge after tDPL
L
H
X
No Operation
No Operation; Precharge after tDPL
H
X
Device Deselect
No Operation; Precharge after tDPL
相關(guān)PDF資料
PDF描述
WEDF1M32B-70H1C5A 1M X 32 FLASH 5V PROM MODULE, 70 ns, CPGA66
WEDF1M32B-90G2UM5A 1M X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68
WF128K16-50CC5A 128K X 16 FLASH 5V PROM MODULE, 50 ns, CDIP40
WME128K8-120DEQA 128K X 8 EEPROM 5V, 120 ns, CDSO32
WME128K8-200CQE 128K X 8 EEPROM 5V, 200 ns, CDIP32
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WED9LC6416V1512BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM
WED9LC6416V1512BI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM
WED9LC6416V1610BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM
WED9LC6416V1610BI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM
WED9LC6416V1612BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*