- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361799 > W9N150V (意法半導(dǎo)體) N-channel 1500V - 2.2ヘ - 8A - TO-247 Very high voltage PowerMESH⑩ Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | W9N150V |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 1500V - 2.2ヘ - 8A - TO-247 Very high voltage PowerMESH⑩ Power MOSFET |
| 中文描述： | N溝道1500V的- 2.2ヘ- 8A條-對247高電壓PowerMESH⑩功率MOSFET |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 141K |
| 代理商： | W9N150V |
Electrical characteristics
STW9N150
4/9
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 750V, I
D
= 2A,
R
G
= 4.7
,
V
GS
= 10V
(see Figure 1)
Tbd
Tbd
Tbd
Tbd
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
I
SD
I
SDM (1)
V
SD (2)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
8
32
A
A
2.
Pulsed: pulse duration = 300μs, duty cycle 1.5%
Forward on voltage
I
SD
= 4A, V
GS
= 0
Tbd
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 4A, di/dt = 100A/μs
V
DD
= 45V Tj = 25°C
(see Figure 3)
Tbd
Tbd
Tbd
ns
μC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 4A, di/dt = 100A/μs
V
DD
= 45V Tj = 150°C
(see Figure 3)
Tbd
Tbd
Tbd
ns
μC
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WA-A240PAI | Peripheral Interface |
| WA-A240PAM | Peripheral Interface |
| WA-A233CBC | Peripheral Interface |
| WA-A233CBI | Peripheral Interface |
| WA-A233CBM | Peripheral Interface |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9NK90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.1Ohm - 8A - TO-220/FP-D2PAK-TO-247 Zener-Protected SuperMESH MOSFET |
| W9PEM3 | 制造商:Northern Technologies Corporation 功能描述:9 POS 1 PC CAN 5.0MM EXIT 制造商:Northern Technologies Corporation 功能描述:9 Positions 1 Piece Mold Cans |
| W9PM1/A30800900 | 制造商:NORTEC 功能描述: |
| W9Q308647PA-222 | 功能描述:MODULE SDR100 SDRAM 64MB 168DIMM RoHS:否 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
| W9Q308727KD-222 | 功能描述:MODULE SDR100 SDRAM 64MB 168DIMM RoHS:否 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。