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參數(shù)資料
| 型號(hào)： | W9N150V |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 1500V - 2.2ヘ - 8A - TO-247 Very high voltage PowerMESH⑩ Power MOSFET |
| 中文描述： | N溝道1500V的- 2.2ヘ- 8A條-對(duì)247高電壓PowerMESH⑩功率MOSFET |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | W9N150V |
STW9N150
Electrical characteristics
3/9
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1mA, V
GS
= 0
1500
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, T
C
=125°C
10
500
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 30V
± 100
nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250μA
3
4
5
V
R
DS(on
Static drain-source on
resistance
V
GS
= 10V, I
D
= 1.3A
2.2
2.7
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
Forward
transconductance
V
DS
= 30V, I
D
= 2A
Tbd
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
3600
280
35
pF
pF
pF
R
g
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
2
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 600V, I
D
= 2.5A,
V
GS
= 10V
(see Figure 2)
90
Tbd
Tbd
nC
nC
nC
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