參數資料
型號: W9864G6DB
廠商: WINBOND ELECTRONICS CORP
英文描述: 1M x 4 BANKS x 16 BITS SDRAM
中文描述: 100萬× 4銀行X 16位內存
文件頁數: 39/48頁
文件大?。?/td> 1283K
代理商: W9864G6DB
W986432DH
Publication Release Date: September 4, 2001
- 39 -
Revision A3
Operating Timing Example, continued
Auto Pre-charge Timing (Read Cycle)
Read
AP
0
11
10
9
8
7
6
5
4
3
2
1
Q0
Q0
Read
AP
Act
Q1
Read
AP
Act
Q1
Q2
AP
Act
Read
Act
Q0
Q3
(1) CAS
Latency=2
( a ) burst length = 1
Read
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate command to
the start of internal precgarging must be at least t
RAS
(min).
represents the Read with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note:
t
RP
t
RP
t
RP
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
t
RP
Q0
Read
AP
Act
Q0
Read
AP
Act
Q1
Q0
Read
AP
Act
Q1
Q2
Q3
Read
AP
Act
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
(2) CAS
( a ) burst length = 1
t
RP
t
RP
t
RP
t
RP
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
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