參數(shù)資料
型號(hào): W9864G6DB
廠商: WINBOND ELECTRONICS CORP
英文描述: 1M x 4 BANKS x 16 BITS SDRAM
中文描述: 100萬(wàn)× 4銀行X 16位內(nèi)存
文件頁(yè)數(shù): 18/48頁(yè)
文件大?。?/td> 1283K
代理商: W9864G6DB
W986432DH
- 18 -
(2) AC Latency Characteristics
CKE to clock disable (CKE Latency)
1
Cycle
DQM to output to HI-Z (Read DQM Latency)
2
DQM to output to HI-Z (Write DQM Latency)
0
Write command to input data (Write Data Latency)
0
CS
to Command input (
CS
Latency)
0
Precharge to DQ Hi-Z Lead time
CL = 2
2
CL = 3
3
Precharge to Last Valid data out
CL = 2
1
CL = 3
2
Bust Stop Command to DQ Hi-Z Lead time
CL = 2
2
CL = 3
3
Bust Stop Command to Last Valid Data out
CL = 2
1
CL = 3
2
Read with Auto pre-charge Command to Active/Ref
Command
CL = 2
BL + t
RP
Cycle + nS
CL = 3
BL + t
RP
Write with Auto pre-charge Command to Active/Ref
Command
CL = 2
BL + t
RP
CL = 3
BL + t
RP
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