參數(shù)資料
型號(hào): W9864G6DB
廠商: WINBOND ELECTRONICS CORP
英文描述: 1M x 4 BANKS x 16 BITS SDRAM
中文描述: 100萬(wàn)× 4銀行X 16位內(nèi)存
文件頁(yè)數(shù): 38/48頁(yè)
文件大?。?/td> 1283K
代理商: W9864G6DB
W986432DH
- 38 -
Operating Timing Example, continued
Auto Pre-charge Timing (Write Cycle)
D0
Write
Act
AP
0
11
10
9
8
7
6
5
4
3
2
1
D0
D0
D0
D0
AP
Act
D1
AP
Act
D1
D1
D2
D2
D3
D3
D4
D5
D6
D7
AP
Act
AP
Act
AP
Act
D1
D0
AP
Act
D1
D2
D3
AP
Act
D0
D1
D2
D3
D4
D5
D6
D7
Write
Write
Write
Write
Write
Write
Write
D0
(1) CAS
Latency=2
( a ) burst length = 1
(2) CAS
Latency=3
Write
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate
command to the start of internal precgarging must be at least tRAS min.)
represents the Write with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note:
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
t
RP
t
WR
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
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