參數(shù)資料
型號： W78M64VP120SBM
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA156
封裝： 13 X 22 MM, PLASTIC, BGA-156
文件頁數(shù)： 16/48頁
文件大小： 1548K
代理商： W78M64VP120SBM
23
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W78M64VP-XSBX
October 2008
Rev. 2
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
TABLE 25 SECURED SILICON SECTOR EXIT
(LLD Function = lld_SecSiSectorExitCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Base + AAAh
Base + 555h
00AAh
Unlock Cycle 2
Base + 555h
Base + 2AAh
0055h
Exit Cycle 3
Base + AAAh
Base + 555h
0088h
Exit Cycle 4
Base + AAAh
Base + 000h
0000h
Note
Base = Base Address.
TABLE 26 ABSOLUTE MAXIMUM RATINGS
Description
Rating
Storage Temperature
-55C to +125C
Ambient Temperature with Power Applied
Voltage with Respect to Ground
All Inputs and I/Os except as noted below (Note 1)
-0.5V to VCC + 0.5V
VCC (Note 1)
-0.5V to +4.0 V
VIO
-0.5V to +4.0 V
A9 and ACC (Note 2)
0.5V to +12.5V
Notes
1.
Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot VSS to –2.0 V for periods of up to 20 ns. See FIG: 11. Maximum DC voltage
on input or I/Os is VCC + 0.5 V. During voltage transitions inputs or I/Os may overshoot to VCC + 2.0 V for periods up to 20 ns. See FIG: 12.
2.
Minimum DC input voltage on pins A9 and ACC is -0.5V. During voltage transitions, A9 and ACC may overshoot VSS to –2.0 V for periods of up to 20 ns. See FIG: 11. Maximum DC
voltage on pins A9 and ACC is +12.5 V, which may overshoot to 14.0 V for periods up to 20 ns.
3.
No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these
or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended
periods may affect device reliability.
TABLE 28 RECOMMENDED OPERATING
CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
I/O Supply Voltage
VIO
3.0
3.6
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
Note: For all AC and DC specications: VIO = VCC
TABLE 27 CAPACITANCE
TA = +25°C, f = 1.0MHz
Parameter
Symbol
Max
Unit
WE# capacitance
CWE
TBD
pF
CS# capacitance
CCS
TBD
pF
Data I/O capacitance
CI/O
TBD
pF
Address input capacitance
CAD
TBD
pF
RESET# capacitance
CRS
TBD
pF
RY/BY#
CRB
TBD
pF
OE# capacitance
COE
TBD
pF
This parameter is guaranteed by design but not tested.
TABLE 29 DATA RETENTION
Parameter
Test Conditions
Min
Unit
Pattern Data
Retention Time
150°C
10
Years
125°C
20
Years
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