參數(shù)資料
型號： W78M64110SBM
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： PROM
英文描述： 8M X 64 FLASH 3.3V PROM, 110 ns, PBGA159
封裝： 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
文件頁數(shù)： 46/50頁
文件大?。?/td> 1679K
代理商： W78M64110SBM
White Electronic Designs
W78M64VP-XSBX
White Electronic Designs Corp. reserves the right to change products or specications without notice.
50
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
November 2009
2010 White Electronic Designs Corp. All rights reserved
Rev. 10
Document Title
8Mx64 Flash 3.3V Page Mode Multi-Chip Package
Revision History Continued
Rev #
History
Release Date Status
Rev 8
Change (Pg. 1, 2, 17, 18, 19, 20, 21, 22, 23, 24, 25, 27)
8.1 Remove "/128KB sectors" from uniform sector architecture
- No Byte mode
8.2 Remove "/256 byte and /16 byte" from secured silicon
sector region.
8.3 Remove "under development, is not qualied or
characterized and is" or cancellation.
8.4 Remove "Pin A-1" from block diagram
8.5 Remove "Byte# = VIL" in device operations
8.6 Remove "AMax:A-1 in byte mode," from Notes in device
operations
8.7 Remove all reference to "Byte Address" from pages 17
through 23
8.8 Change ILI to 10μA for WP/ACC and 8μA for others,
ILIT = 70μA, ILO = 2μA, ICC1 = 440μA, IIO2 = 20μA,
ICC2 = 20μA, ICC3 = 180μA, ICC4 = 10μA, ICC5 = 1mA,
ICC6 = 10μA, IACC = 40mA for WP#/ACC Pin and
160mA for VCC Pin
8.9 Add Note (1) to AC Characteristics: tOE for data polling is
45ns when VIO = 1.65V to 2.7V and 32ns when VIO = 2.7V
to 3.6V.
September 2009
Advanced
Rev 9
Change (Pg. 1, 23)
9.1 Remove “Advanced,” “under development, is not qualied
or characterized and is,” “or cancellation.”
9.2 Add capacitance values to table 27.
CWE = 13pf, CCS = 25pf, CI/O = 15, CAD = 30pf,
CRB = 40pf and COE = 35pf.
9.3 Change status of data sheet to Final.
9.4 Change “max” to “22”
9.5 Remove “Note” in Fig. 16
October 2009
Final
Rev 10
Change (Pg. 26, 27)
10.1 Corrected Table 35
10.2 Add “tCH” to Table 37
November 2009
Final
相關(guān)PDF資料
PDF描述
W78M64110SBI 8M X 64 FLASH 3.3V PROM, 110 ns, PBGA159
W78M64120SBI 8M X 64 FLASH 3.3V PROM, 120 ns, PBGA159
W78M64110SBC 8M X 64 FLASH 3.3V PROM, 110 ns, PBGA159
W78M64V100SBC 8M X 64 FLASH 3.3V PROM MODULE, 100 ns, PBGA159
W78M64VP120SBM SPECIALTY MEMORY CIRCUIT, PBGA156
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