參數(shù)資料
型號(hào): W49L102Q-12B
英文描述: x16 Flash EEPROM
中文描述: x16閃存EEPROM
文件頁(yè)數(shù): 13/21頁(yè)
文件大?。?/td> 275K
代理商: W49L102Q-12B
W49L102
Publication Release Date: February 19, 2002
- 13 -
Revision A4
AC Characteristics, continued
Read Cycle Timing Parameters
(V
DD
= 3.3V
±
0.3V, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
W49L102-70B W49L102-90B W49L102-12B UNIT
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
T
RC
70
-
90
-
120
-
nS
Chip Enable Access Time
T
CE
-
70
-
90
-
120
nS
Address Access Time
T
AA
-
70
-
90
-
120
nS
Output Enable Access Time
T
OE
-
35
-
40
-
50
nS
#CE Low to Active Output
T
CLZ
0
-
0
-
0
-
nS
#OE Low to Active Output
T
OLZ
0
-
0
-
0
-
nS
#CE High to High-Z Output
T
CHZ
-
30
-
30
-
30
nS
#OE High to High-Z Output
T
OHZ
-
30
-
30
-
30
nS
Output Hold from Address Change T
OH
0
-
0
-
0
-
nS
Write Cycle Timing Parameters
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Address Setup Time
T
AS
10
-
-
nS
Address Hold Time
T
AH
100
-
-
nS
#WE and #CE Setup Time
T
CS
0
-
-
nS
#WE and #CE Hold Time
T
CH
0
-
-
nS
#OE High Setup Time
T
OES
0
-
-
nS
#OE High Hold Time
T
OEH
0
-
-
nS
#CE Pulse Width
T
CP
200
-
-
nS
#WE Pulse Width
T
WP
200
-
-
nS
#WE High Width
T
WPH
200
-
-
nS
Data Setup Time
T
DS
100
-
-
nS
Data Hold Time
T
DH
10
-
-
nS
Word Programming Time
T
BP
-
50
60
μ
S
Sec.
Erase Cycle Time
T
EC
-
0.1
1
Note: All AC timing signals observe the following guidelines for determining setup and hold times:
(a) High level signal's reference level is V
IH
and (b) low level signal's reference level is V
IL
.
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