參數(shù)資料
型號(hào): W49L401T-70B
元件分類(lèi): EEPROM
英文描述: EEPROM
中文描述: EEPROM的
文件頁(yè)數(shù): 1/24頁(yè)
文件大小: 307K
代理商: W49L401T-70B
W49L401(T)
256K
16 CMOS FLASH MEMORY
Publication Release Date: August 16, 2002
- 1 -
Revision A4
1. GENERAL DESCRIPTION
The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K
×
16 bits. The
device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt V
PP
is not required. The unique cell architecture of the W49L401(T) results in fast program/erase
operations with extremely low current consumption (compared to other comparable 3.3-volt flash
memory products). The device can also be programmed and erased using standard EPROM
programmers.
2. FEATURES
Single Voltage operations:
3.0
3.6V Read/Erase/Program
Fast Program operation:
Word-by-Word programming: 30
μ
S (typ.)
Fast Erase operation:
Page/Block Erase time: 50 mS (typ.)
Chip Erase time: 200 mS (typ.)
Fast Read access time: 70 nS
Endurance: 10K cycles (typ.)
Twenty-year data retention
Hardware data protection
Block configuration
One 8K-word boot block with lockout
protection
Two 4K-word parameter blocks
One 16K-word main memory array block
Seven 32K-word main memory array blocks
128 uniform 2K-word pages
Optional Uniform Page configuration
Low power consumption
Active current: 10 mA (typ.)
Standby current: 5
μ
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
RY/#BY open-drain output provides hardware
end-of-write detection
Hardware #RESET pin
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 44-pin SOP, 48-pin TSOP
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