參數(shù)資料
型號(hào): W49L102Q-12B
英文描述: x16 Flash EEPROM
中文描述: x16閃存EEPROM
文件頁數(shù): 11/21頁
文件大?。?/td> 275K
代理商: W49L102Q-12B
W49L102
Publication Release Date: February 19, 2002
- 11 -
Revision A4
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to V
SS
Potential
-0.5 to +4.6
V
Operating Temperature
0 to +70
°
C
°
C
V
Storage Temperature
-65 to +150
D.C. Voltage on Any Pin to Ground Potential except A9
-0.5 to V
DD
+1.0
Transient Voltage (<20 nS) on Any Pin to Ground Potential
-1.0 to V
DD
+1.0
V
Voltage on A9 Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
DC Operating Characteristics
(V
DD
= 3.3V
±
0.3V, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP.
MAX.
Power Supply
Current
I
DD
#CE = #OE = V
IL
, #WE = V
IH
,
all I/Os open
Address inputs = V
IL
/V
IH
, at f = 5 MHz
-
15
25
mA
Standby V
DD
Current
(TTL input)
I
SB
1
#CE = V
IH
, all I/Os open
Other inputs = V
IL
/V
IH
-
-
1
mA
Standby V
DD
Current
(CMOS input)
I
SB
2 #CE = V
DD
-0.3V, all I/Os open
Other inputs = V
DD
-0.3V/ V
SS
-
10
50
μ
A
Input Leakage
Current
I
LI
V
IN
= V
SS
to V
DD
-
-
10
μ
A
Output Leakage
Current
I
LO
V
OUT
= V
SS
to V
DD
-
-
10
μ
A
Input Low Voltage
V
IL
-
-0.3
-
0.6
V
Input High Voltage
V
IH
-
2.0
-
V
DD
+0.5
V
Output Low Voltage
V
OL
I
OL
= 1.6 mA
-
-
0.45
V
Output High Voltage
V
OH
I
OH
= -0.1 mA
2.4
-
-
V
相關(guān)PDF資料
PDF描述
W49L401 FLASH
W49L401S-70B EEPROM
W49L401T-70B EEPROM
W49L401TS70B EEPROM
W49L401TT70B EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W49L102Q-55 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 16 CMOS 3.3V FLASH MEMORY
W49L102Q-55B 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 16 CMOS 3.3V FLASH MEMORY
W49L102Q-70 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 16 CMOS 3.3V FLASH MEMORY
W49L102Q-70B 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 16 CMOS 3.3V FLASH MEMORY
W49L102Q-90 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 16 CMOS 3.3V FLASH MEMORY