參數(shù)資料
型號(hào)： W49L102Q-12
英文描述： EEPROM|FLASH|64KX16|CMOS|TSSOP|40PIN|PLASTIC
中文描述： 的EEPROM | FLASH動(dòng)畫| 64KX16 |的CMOS | TSSOP封裝| 40PIN |塑料
文件頁(yè)數(shù)： 9/21頁(yè)
文件大?。?/td> 275K
代理商： W49L102Q-12
W49L102
Publication Release Date: February 19, 2002
- 9 -
Revision A4
Software Product Identification and Boot Block Lockout Detection Acquisition
Flow
Product
Identification
Entry (1)
Load data 55
to
address 2AAA
Load data 90
to
address 5555
Pause 10 S
Product
Identification
and Boot Block
Lockout Detection
Mode (3)
Read address = 00000
data = DA
Read address = 00001
data = 2F
Read address = 00002
data = FF/FE
(4)
Product
Identification Exit(6)
Load data 55
to
address 2AAA
Load data F0
to
address 5555
Normal Mode
(5)
(2)
(2)
Load data AA
to
address 5555
Load data AA
to
address 5555
Pause 10 S
Notes for software product identification/boot block lockout detection:
(1) Data Format: DQ15
DQ8 (Don't Care), DQ7
DQ0 (Hex); Address Format: A14
A0 (Hex)
(2) A1
A15 = V
IL
; manufacture code is read for A0 = V
IL
; device code is read for A0 = V
IH
.
(3) The device does not remain in identification and boot block lockout detection mode if power down.
(4) If the output data is "FF Hex," the boot block programming lockout feature is activated; if the output data "FE Hex," the
lockout feature is inactivated and the block can be programmed.
(5) The device returns to standard operation mode.
(6) Optional 1-write cycle (write F0 hex at XXXX address) can be used to exit the product identification/boot block lockout
detection.
相關(guān)PDF資料
PDF描述
W49L102Q-12B x16 Flash EEPROM
W49L401 FLASH
W49L401S-70B EEPROM
W49L401T-70B EEPROM
W49L401TS70B EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W49L102Q-12B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM
W49L102Q-55 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 16 CMOS 3.3V FLASH MEMORY
W49L102Q-55B 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 16 CMOS 3.3V FLASH MEMORY
W49L102Q-70 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 16 CMOS 3.3V FLASH MEMORY
W49L102Q-70B 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 16 CMOS 3.3V FLASH MEMORY
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