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參數(shù)資料
| 型號： | W49F020T-70B |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 11/23頁 |
| 文件大?。?/td> | 280K |
| 代理商： | W49F020T-70B |
W49F020
- 11 -
7. DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to V
SS
Potential
-0.5 to +7.0
V
Operating Temperature
0 to +70
°
C
Storage Temperature
-65 to +150
°
C
D.C. Voltage on Any Pin to Ground Potential except #OE
-0.5 to V
DD
+1.0
V
Transient Voltage (<20 nS) on Any Pin to Ground Potential
-1.0 to V
DD
+1.0
V
Voltage on #OE Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
DC Operating Characteristics
(V
DD
= 5.0V
±
10
%
, V
SS
= 0V, T
A
= 0 to 70
°
C)
LIMITS
PARAMETER
SYM.
TEST CONDITIONS
MIN. TYP.
MAX.
UNIT
Power Supply
Current
I
CC
#CE
= #OE
= V
IL
, #WE
= V
IH
,
all DQs open
Address inputs = V
IL
/V
IH
, at f = 5 MHz
-
25
50
mA
Standby V
DD
Current (TTL input)
I
SB
1
#CE = V
IH
, all DQs open
Other inputs = V
IL
/V
IH
-
2
3
mA
Standby V
DD
Current
(CMOS input)
I
SB
2
#CE = V
DD
-0.3V, all DQs open
Other inputs = V
DD
-0.3V/ V
SS
-
20
100
μ
A
Input Leakage
Current
I
LI
V
IN
= V
SS
to V
DD
-
-
10
μ
A
Output Leakage
Current
I
LO
V
OUT
= V
SS
to V
DD
-
-
10
μ
A
Input Low Voltage
V
IL
-
-0.3
-
0.8
V
Input High Voltage
V
IH
-
2.0
-
V
DD
+0.5
V
Output Low Voltage
V
OL
I
OL
= 2.1 mA
-
-
0.45
V
Output High Voltage
V
OH
I
OH
= -0.4 mA
2.4
-
-
V
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