參數(shù)資料
型號(hào): W49F020T-70B
元件分類: EEPROM
英文描述: EEPROM
中文描述: EEPROM的
文件頁(yè)數(shù): 1/23頁(yè)
文件大?。?/td> 280K
代理商: W49F020T-70B
W49F020
256K
×
8 CMOS FLASH MEMORY
Publication Release Date: December 18, 2002
- 1 -
Revision A2
1. GENERAL DESCRIPTION
The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K
×
8 bits. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is not
required. The unique cell architecture of the W49F020 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products). The
device can also be programmed and erased using standard EPROM programmers.
2. FEATURES
Single 5-volt operations:
5-volt read
5-volt erase
5-volt program
Fast Program operation:
Byte-by-Byte programming: 50
μ
S (max.)
Fast erase operation: 100 mS (typ.)
Fast read access time: 70/90 nS
Endurance: 10K cycles (typ.)
Twenty-year data retention
Hardware data protection
One 8K Byte boot block with lockout protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin DIP and 32-pin
TSOP and 32-pin-PLCC
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