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參數(shù)資料
| 型號： | W3H64M16E-400BC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.6 ns, PBGA79 |
| 封裝： | 14 X 11 MM, 1.27 MM PITCH, PLASTIC, BGA-79 |
| 文件頁數(shù)： | 25/30頁 |
| 文件大?。?/td> | 881K |
| 代理商： | W3H64M16E-400BC |
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W3H64M16E-XBX
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2009
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specications without notice.
TABLE – 1 BALL DESCRIPTIONS
(continued)
Symbol
Type
Description
A0-A12
Input
Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit
(A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10
sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW,
bank selected by BA2–BA0) or all banks (A10 HIGH) The address inputs also provide the op-code during a LOAD
MODE command.
DQ0-15
I/O
Data input/output: Bidirectional data bus
UDQS, UDQS#
I/O
Data strobe for upper byte: Output with read data, input with write data for source synchronous operation. Edge-
aligned with read data, center-aligned with write data. UDQS# is only used when differential data strobe mode is
enabled via the LOAD MODE command.
LDQS, LDQS#
I/O
Data strobe for lower byte: Output with read data, input with write data for source synchronous operation. Edge-
aligned with read data, center-aligned with write data. UDQS# is only used when differential data strobe mode is
enabled via the LOAD MODE command.
VCC, VCCQ
Supply
Power Supply: Core & IOs, VCCQ is common to VCC
VREF
Supply
SSTL_18 reference voltage.
VSS
Supply
Ground
DNU
-
Future use; Row address bit A13 upgrades to dual rank W3H264M16E-XNBX; CKE1, ODT1, CS1 .
相關PDF資料 |
PDF描述 |
|---|---|
| W3H64M64E-400SBC | 64M X 64 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-533ES | 64M X 72 DDR DRAM, 0.5 ns, PBGA208 |
| W3H64M72E-ESM | 64M X 72 DDR DRAM, PBGA208 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W3H64M16E-400BI | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ - Bulk |
| W3H64M64E-400SBC | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H64M64E-400SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-400SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-533SBC | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
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