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參數(shù)資料
| 型號： | W3E16M64S-250BC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 64 DDR DRAM, 0.8 ns, PBGA219 |
| 封裝： | 21 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 7/16頁 |
| 文件大小： | 406K |
| 代理商： | W3E16M64S-250BC |
15
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E16M64S-XBX
January 2008
Rev. 5
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ORDERING INFORMATION
Bottom View
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
T
R
P
N
M
L
K
J
H
G
F
E
D
C
B
A
219 x
0.762 (0.030) NOM
1.27 (0.050)
NOM
25.1 (0.988) MAX
19.05 (0.750) NOM
21.1 (0.831)
MAX
19.05 (0.750)
NOM
2.03 (0.080)
MAX
0.61 (0.024) NOM
PACKAGE DIMENSION: 219 PLASITC BALL GRID ARRAY (PBGA)
WHITE ELECTRONIC DESIGNS CORP.
DDR SDRAM
CONFIGURATION, 16M x 64
2.5V Power Supply
FREQUENCY (MHz)
200 = 200Mbps
250 = 250Mbps
266 = 266Mbps
PACKAGE:
B = 219 Plastic Ball Grid Array (PBGA)
DEVICE GRADE:
M = Military
-55°C to +125°C
I
= Industrial
-40°C to +85°C
C = Commercial
0°C to +70°C
W 3E 16M 64 S - XXX B X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3E16M72S-266BI | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E16M72S-200BI | 16M X 72 DDR DRAM, 0.8 ns, PBGA219 |
| W3E16M72SR-200BM | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E16M72SR-200BC | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E16M72SR-200BM | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3E16M64S-250BI | 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E16M64S-250BM | 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E16M64S-266BC | 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E16M64S-266BI | 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E16M64S-266BM | 制造商:Microsemi Corporation 功能描述:16M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
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