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參數(shù)資料
| 型號(hào)： | W25Q64CVZPAP |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 6 X 5 MM, GREEN, WSON-8 |
| 文件頁(yè)數(shù)： | 38/79頁(yè) |
| 文件大小： | 1086K |
| 代理商： | W25Q64CVZPAP |
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W25Q64CV
Publication Release Date: April 01, 2011
- 43 -
Revision C
DO
(IO
1)
7.2.23 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in Figure 21.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (20h)
High Impedance
8
9
29
30
31
24-Bit Address
23
22
2
1
0
*
Mode 0
Mode 3
= MSB
*
Figure 21. Sector Erase Instruction Sequence Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WMS128K8C-25CQE | 128K X 8 STANDARD SRAM, 25 ns, CDIP32 |
| WMF512K8X-150DEC5 | 512K X 8 FLASH 5V PROM, 150 ns, CDSO32 |
| WME128K8X-200DEC | 128K X 8 EEPROM 5V, 200 ns, CDSO32 |
| WMF512K8X-70FEM5 | 512K X 8 FLASH 5V PROM, 70 ns, CDFP32 |
| WMF512K8X-90CM5 | 512K X 8 FLASH 5V PROM, 90 ns, CDIP32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q64CVZPIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64CVZPIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64DW | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI |
| W25Q64DWSFIG | 功能描述:IC FLASH SPI 64MBIT 16SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
| W25Q64DWSFIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI |
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