參數(shù)資料
型號: W19B322MTB9G
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝: TFBGA-48
文件頁數(shù): 36/52頁
文件大?。?/td> 1955K
代理商: W19B322MTB9G
W19B32XMT/B
Publication Release Date: March 23, 2004
- 41 -
Revision A2
9.8 Alternate #CE Controlled Erase and Program Operations
90 nS
PARAMETER
SYM.
MIN.
TYP.
(Note3)
MAX.
(Note4)
UNIT
Write Cycle Time (Note 1)
TWC
90
-
nS
Address Setup Time
TAS
0
-
nS
Address Hold Time
TAH
45
-
nS
Data Setup Time
TDS
45
-
nS
Data Hold Time
TDH
0
-
nS
Read Recover Time Before Write (#OE High to
#WE Low)
TGHEL
0
-
nS
#WE Setup Time
TWS
0
-
nS
#WE Hold Time
TWH
0
-
nS
#CE Pulse Width
TCP
35
-
nS
#CE Pulse Width High
TCPH
30
-
nS
Byte
TPB
-
5
150
Programming Time (Note 6)
Word
TPW
-
7
210
S
Byte
Accelerated Programming Time (Note 6)
Word
TACCP
-
4
120
S
Sector Erase Time (Note 2)
TSE
-
0.7
15
sec
Chip Erase Time (Note 2)
TCE
-
49
-
sec
Byte
TCPB
-
21
63
Chip Program Time (Note 5)
Word
TCPW
-
14
42
sec
Notes:
1. Not 100 % tested.
2. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
3. Typical program and erase time assume the following conditions : 25
°C, 3.0V VDD, 100,000 cycles .Additionally,
programming typicals assume checkerboard pattern.
4. Under worst case conditions of 90
°C, VDD =2.75V, 100,000 cycles.
5. The typical chip programming time is considerably less than the maximun chip programming time listed,since most
bytes program faster than maximun program times listed.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
7. The device has a minimum erase and program cycle endurance of 100,000 cycles.
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