參數(shù)資料
型號: VTD34F
廠商: PerkinElmer Inc.
英文描述: Alternate Source/ Second Source Photodiodes
中文描述: 備用源/二源光電二極管
文件頁數(shù): 1/1頁
文件大小: 42K
代理商: VTD34F
74
Alternate Source/
Second Source Photodiodes
VTD34F
(BPW34F INDUSTRY EQUIVALENT)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic
package. The package material filters out visible light
but passes infrared. Suitable for direct mounting to
P.C.B. Arrays can be formed by positioning these
devices side by side. The photodiodes are designed
to provide excellent sensitivity at low levels of
irradiance.
PACKAGE DIMENSIONS
inch (mm)
CASE 22 MNI DIP
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
ABSOLUTE MAXIMUMRATINGS
Storage Temperature:
Operating Temperature:
-20°C to 80°C
-20°C to 80°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTD34F
UNITS
Mn.
Typ.
Max.
Re
V
OC
TC V
OC
I
D
C
J
t
R
/t
F
S
R
λ
range
λ
p
V
BR
θ
1/2
NEP
Responsivity
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Junction Capacitance
Rise/Fall Time @ 1 k
Lead
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp.-50% Resp. Pt.
Noise Equivalent Power
0.5 mW/cm
2
, 940 nm
0.5 mW/cm
2
, 940 nm
2850 K
H = 0, V
R
= 10 V
@ 1 MHz, V
R
= 0 V
V
R
= 10 V, 833 nm
@ Peak
15
275
μA
mV
mV/°C
nA
pF
nsec
A/W
nm
nm
V
Degrees
350
-2.0
2
60
50
0.60
30
725
1150
940
40
±50
4.8 x 10
-14
D*
Specific Detectivity
5.7 x 10
12
/ W
W
Hz
cm Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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