參數(shù)資料
型號(hào)： VTE1013
廠商： PerkinElmer Inc.
英文描述： GaAs Infrared Emitting Diodes
中文描述： 砷化鎵紅外發(fā)光二極管
文件頁數(shù)： 1/1頁
文件大?。?/td> 29K
代理商： VTE1013
126
GaAs Infrared Emitting Diodes
TO-46 Flat Window Package — 940 nm
VTE1013
PACKAGE DIMENSIONS
inch (mm)
CASE 24A
TO-46 HERMETIC (Flat Window)
CHIP SIZE: .018" X .018"
DESCRIPTION
This wide beamangle TO-46 hermetic emtter contains a large area, double wirebonded, GaAs, 940 nmIRED chip suitable for higher
current pulse applications.
ABSOLUTE MAXIMUMRATINGS @ 25°C
(unless otherwise noted)
MaximumTemperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
MaximumContinuous Current:
Derate above 30°C:
Peak Forward Current, 10 μs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-55°C to 125°C
200 mW
2.11 mW/°C
100 mA
1.05 mA/°C
3.0 A
-.8%/°C
MaximumReverse Voltage:
MaximumReverse Current @ V
R
= 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
F
= 20 mA
Rise:1.0 μs
Fall: 1.0 μs
Lead Soldering Temperature:
(1.6 mmfromcase, 5 seconds max.
5.0V
10 μA
940 nm
35 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also GaAlAs curves, pages 123-124)
Refer to General Product Notes, page 2.
Part Number
Output
Forward Drop
Half Power Beam
Angle
Irradiance
Radiant
Intensity
Total Power
Test
Current
V
F
E
e
Condition
I
e
P
O
I
FT
@ I
FT
θ
1/2
mW/cm
2
distance
Diameter
mW/sr
mW
mA
(Pulsed)
Volts
Typ.
Min.
Typ.
mm
mm
Min.
Typ.
Typ.
Max.
VTE1013
2.1
2.7
36
6.4
27
30
1.0
1.9
2.5
±35°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VTE1013H 制造商:Excelitas Technologies Corporation 功能描述:IR EMITTER, 940NM, 4.78MM, TO-46, THD; Peak Wavelength:940nm; Forward Current If(AV):100mA; Rise Time:1s; Fall Time tf:1s; Radiant Intensity:27mW/Sr; Viewing Angle:35; Forward Voltage VF Max:1.9V; Operating Temperature Min:-55C ;RoHS Compliant: Yes
VTE1063 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:GaAlAs Infrared Emitting Diodes
VTE1063H 制造商:Excelitas Technologies Corporation 功能描述:IR EMITTER, 880NM, 4.78MM, TO-46, THD; Peak Wavelength:880nm; Forward Current If(AV):100mA; Rise Time:1s; Fall Time tf:1s; Radiant Intensity:49mW/Sr; Viewing Angle:35; Forward Voltage VF Max:2.8V; Operating Temperature Min:-55C ;RoHS Compliant: Yes
VTE1113 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:GaAs Infrared Emitting Diodes
VTE1113H 制造商:Excelitas Technologies Corporation 功能描述:IR EMITTER, 940NM, 4.78MM, TO-46, THD; Peak Wavelength:940nm; Forward Current If(AV):100mA; Rise Time:1s; Fall Time tf:1s; Radiant Intensity:156mW/Sr; Viewing Angle:10; Forward Voltage VF Max:1.9V; Operating Temperature Min:-55C ;RoHS Compliant: Yes
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