參數(shù)資料
型號： VTE1113
廠商： PerkinElmer Inc.
英文描述： GaAs Infrared Emitting Diodes
中文描述： 砷化鎵紅外發(fā)光二極管
文件頁數(shù)： 1/1頁
文件大?。?/td> 25K
代理商： VTE1113
127
GaAs Infrared Emitting Diodes
TO-46 Lensed Package — 940 nm
VTE1113
PACKAGE DIMENSIONS
inch (mm)
CASE 24
TO-46 HERMETIC (Lensed)
CHIP SIZE: .018" X .018"
DESCRIPTION
This narrow beamangle TO-46 hermetic emtter contains a large area, double wirebonded, GaAs, 940 nmIRED chip suitable for
higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C
(unless otherwise noted)
MaximumTemperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
MaximumContinuous Current:
Derate above 30°C:
Peak Forward Current, 10 μs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-55°C to 125°C
200 mW
2.11 mW/°C
100 mA
1.05 mA/°C
3.0 A
-.8%/°C
MaximumReverse Voltage:
MaximumReverse Current @ V
R
= 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
F
= 20 mA
Rise:1.0 μs
Fall: 1.0 μs
Lead Soldering Temperature:
(1.6 mmfromcase, 5 seconds max.
5.0V
10 μA
940 nm
35 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also GaAlAs curves, pages 123-124)
Refer to General Product Notes, page 2.
Part Number
Output
Forward Drop
Half Power Beam
Angle
Irradiance
Radiant
Intensity
Total Power
Test
Current
V
F
E
e
Condition
I
e
P
O
I
FT
@ I
FT
θ
1/2
mW/cm
2
distance
Diameter
mW/sr
mW
mA
(Pulsed)
Volts
Typ.
Mn.
Typ.
mm
mm
Min.
Typ.
Typ.
Max.
VTE1113
12
15
36
6.4
156
30
1.0
1.9
2.5
±10°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VTE1113H 制造商:Excelitas Technologies Corporation 功能描述:IR EMITTER, 940NM, 4.78MM, TO-46, THD; Peak Wavelength:940nm; Forward Current If(AV):100mA; Rise Time:1s; Fall Time tf:1s; Radiant Intensity:156mW/Sr; Viewing Angle:10; Forward Voltage VF Max:1.9V; Operating Temperature Min:-55C ;RoHS Compliant: Yes
VTE1163 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:GaAlAs Infrared Emitting Diodes
VTE1163H 制造商:Excelitas Technologies Corporation 功能描述:IR EMITTER 880NM 4.78MM TO-46-2 THD 制造商:EXCELITAS TECH 功能描述:IR EMITTER, 880NM, 4.78MM, TO-46-2, THD 制造商:Excelitas Technologies Corporation 功能描述:IR EMITTER, 880NM, 4.78MM, TO-46-2, THD; Peak Wavelength:880nm; Forward Current If(AV):100mA; Rise Time:1s; Fall Time tf:1s; Radiant Intensity:285mW/Sr; Viewing Angle:10; Forward Voltage VF Max:2.8V; Diode Case Style:TO-46 ;RoHS Compliant: Yes
VTE1261 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:GaAlAs Infrared Emitting Diodes
VTE1261FH 制造商:EG & G VACTEC 功能描述:IR EMITTING DIODE, Peak Wavelength:880nm, Forward Current If(AV):100mA, Rise Tim 制造商:Excelitas Technologies Corporation 功能描述:IR EMITTING DIODE, Peak Wavelength:880nm, Forward Current If(AV):100mA, Rise Time:1s, Fall Time tf:1s, Radiant Intensity:39mW/Sr, Viewing Angle:10, Forward Voltage VF Max:1.5V, Operating Temperature Min:-40C, Diode Case Style:- , RoHS Compliant: Yes 制造商:PerkinElmer Inc 功能描述:IR EMITTING DIODE, Peak Wavelength:880nm, Forward Current If(AV):100mA, Rise Tim
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