參數(shù)資料
型號: VP2206
廠商: ELAN Microelctronics Corp .
英文描述: P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-60V,0.9Ω,P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管)
中文描述: P通道增強(qiáng)模式垂直的DMOS場效應(yīng)管(擊穿電壓- 60V的,0.9Ω,P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管)
文件頁數(shù): 4/4頁
文件大小: 33K
代理商: VP2206
7-262
Gate Drive Dynamic Characteristics
V
G
(
On-Resistance vs. Drain Current
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
400
C
0
-10
-20
-30
-40
300
200
0
0
-2
-4
-6
-8
-10
-10
-8
-6
-4
-2
0
-50
0
50
100
150
1.1
1.0
5
2
1.2
1.1
1.0
0.9
0.8
0.7
-10
-8
-6
-4
-2
0
2
4
6
8
10
-50
0
50
100
150
310 pF
V
GS
= -10V
125
°
C
0
-2
-4
-6
-10
-8
0
3
4
f = 1MHz
0.9
725 pF
2.0
1.6
1.2
0.8
0.4
0
V
(th)
@ -1mA
R
DS(ON)
@ -10V, -3.5A
25
°
C
100
0
1
V
GS
= -5V
R
D
B
D
T
j
(
°
C)
I
D
(amperes)
BV
DSS
Variation with Temperature
V
DS
= -25V
T
j
(
°
C)
V
(th)
and R
DS
Variation with Temperature
V
GS
(volts)
I
D
R
D
(
T
A
= -55
°
C
Q
G
(nanocoulombs)
V
G
V
DS
(volts)
C
ISS
C
OSS
C
RSS
V
DS
=
-40V
V
DS
= -10V
VP2206
Typical Performance Curves
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VP2206N2 功能描述:MOSFET 60V 0.9Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VP2206N3 功能描述:MOSFET 60V 0.9Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VP2206N3-G 功能描述:MOSFET 60V 0.9Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VP2206N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VP2206N3-G P003 制造商:Supertex Inc 功能描述:Trans MOSFET P-CH 60V 0.64A 3-Pin TO-92 T/R 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET