參數(shù)資料
型號(hào)： VP2206
廠商： ELAN Microelctronics Corp .
英文描述： P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-60V,0.9Ω，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
中文描述： P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管（擊穿電壓- 60V的，0.9Ω，P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管）
文件頁數(shù)： 2/4頁
文件大小： 33K
代理商： VP2206
7-260
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
6.0W
θ
jc
°
C/W
20.8
θ
ja
°
C/W
125
I
DR
*
I
DRM
TO-39
-1.6A
-8.0A
-1.6A
-8.0A
TO-92
-0.65A
-4.0A
1.0W
125
170
-0.65A
-4.0A
*
I
D
(continuous) is limited by max rated T
j
.
VP2206
Switching Waveforms and Test Circuit
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-60
V
V
GS
= 0V, I
D
= -10mA
V
GS
= V
DS
, I
D
= -10mA
V
GS
= V
DS
, I
D
= -10mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= -5V, V
DS
= -25V
V
GS
= -10V, V
DS
=- 25V
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
-1.0
-3.5
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-4.3
-5.5
mV/
°
C
-1
-100
nA
Zero Gate Voltage Drain Current
-50
μ
A
-10
mA
I
D(ON)
ON-State Drain Current
-0.85
-2
-4
-9
A
R
DS(ON)
1.3
1.5
V
GS
= -5V, I
D
= -1A
0.75
0.9
V
GS
= -10V, I
D
= -3.5A
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.85
1.2
%/
°
C
V
GS
= -10V, I
D
= -3.5A
V
DS
= -25V, I
D
= -2A
0.8
1.4
Input Capacitance
325
450
Common Source Output Capacitance
125
180
pF
Reverse Transfer Capacitance
30
40
Turn-ON Delay Time
4
15
Rise Time
16
25
Turn-OFF Delay Time
16
50
Fall Time
22
50
Diode Forward Voltage Drop
-1.1
-1.6
V
V
GS
= 0V, I
SD
= -3.5A
V
GS
= 0V, I
SD
= -1A
Reverse Recovery Time
500
ns
Note 1:
Note 2:
All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
= 0V, V
DS
= -25V
f = 1 MHz
V
DD
= -25V
I
D
= -4A
R
GEN
= 10
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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