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參數(shù)資料
| 型號(hào)： | VP2410L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-240V，夾斷電流-0.18A的P溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | P通道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓，240伏，夾斷電流，0.18A的P溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | VP2410L |
VP2410L
Siliconix
S-52426—Rev. C, 14-Apr-97
1
P-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
–240
10 @ V
GS
= –4.5 V
–0.8 to –2.5
–0.18
Features
High-Side Switching
Secondary Breakdown Free: –255 V
Low On-Resistance: 8
Low-Power/Voltage Driven
Excellent Thermal Stability
Benefits
Ease in Driving Switches
Full-Voltage Operation
Low Offset Voltage
Easily Driven Without Buffer
No High-Temperature “Run-Away”
Applications
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
Power Supply, Converters
Motor Control
Switches
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 150 C)
T
A
= 25 C
I
D
–0.18
T
A
= 100 C
–0.11
A
Pulsed Drain Current
a
I
DM
–0.72
Power Dissipation
T
A
= 25 C
P
D
0.8
W
T
A
= 100 C
0.32
Maximum Junction-to-Ambient
R
thJA
156
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70211.
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| VP2450N3-G | 功能描述:MOSFET 500V 30Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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