- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359410 > VP2410L (Vishay Intertechnology,Inc.) P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-240V，夾斷電流-0.18A的P溝道增強(qiáng)型MOSFET晶體管) PDF資料下載
參數(shù)資料
| 型號： | VP2410L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-240V，夾斷電流-0.18A的P溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | P通道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓，240伏，夾斷電流，0.18A的P溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | VP2410L |
VP2410L
2
Siliconix
S-52426—Rev. C, 14-Apr-97
Specifications
a
Limits
Parameter
Symbol
Test Conditions
Min
Typ
b
Max
Unit
Static
Drain Source Breakdown Voltage
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –5 A
–240
–255
V
GS
= 0 V, I
D
= –10 A
–255
V
Gate Threshold Voltage
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –1 mA
–2.1
V
DS
= V
GS
, I
D
= –2.5 mA
–0.8
–2.2
–2.5
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
10
nA
T
J
= 125 C
50
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –180 V, V
GS
= 0 V
–1
A
T
J
= 125 C
–100
On-State Drain Current
c
I
D(on)
V
DS
= –10 V, V
GS
= –4.5 V
–150
–300
mA
V
GS
= –10 V, I
D
= –0.1 A
6
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= –4.5 V, I
D
= –0.1 A
8
10
T
J
= 125 C
14.5
20
Forward Transconductance
c
g
fs
V
DS
= –10 V, I
D
= –0.1 A
125
175
mS
Common Source Output Conductance
c
g
os
V
DS
= –10 V, I
D
= –0.05 A
0.125
Dynamic
Input Capacitance
C
iss
V
DS
=–25 V, V
GS
= 0 V
f = 1 MHz
25 V V
65
95
Output Capacitance
C
oss
25
30
pF
Reverse Transfer Capacitance
C
rss
12
15
Switching
d
t
ON
25
Turn-On Time
t
d(on)
7
15
t
r
–25
–0 1
–0.1
18
30
ns
t
OFF
90
Turn-Off Time
t
d(off)
45
70
t
f
45
60
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPDV24
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VP2450 | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-500V,30Ω，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| VP2450 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP2450N3 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP2450N8 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP2450ND | P-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP24382TV25 | 制造商:Panduit Corp 功能描述:Voice-Patch One Pair Patch Panel |
| VP24382TV25Y | 功能描述:以太網(wǎng)和電信連接器 Voice Patch Panel RJ45-RJ2 RoHS:否 制造商:Pulse 產(chǎn)品:Modular Jacks 性能類別: USOC 代碼:RJ45 位置/觸點數(shù)量: 安裝風(fēng)格:Through Hole 端口數(shù)量:1 x 1 型式:Female 屏蔽: 電流額定值: 電壓額定值: 觸點電鍍: 外殼材料:Thermoplastic IP 等級: |
| VP2450 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP2450N3 | 功能描述:MOSFET 500V 30Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP2450N3-G | 功能描述:MOSFET 500V 30Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。