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參數(shù)資料
| 型號： | VP1506NW |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 27K |
| 代理商： | VP1506NW |
07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VP1506
VP1509
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Order Number / Package
BV
DSS
/
BV
DGS
-60V
R
DS(ON)
(max)
I
D(ON)
(min)
Die
8.0
-0.5A
VP1506NW
-90V
8.0
-0.5A
VP1509NW
MIL visual screening available.
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
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