參數(shù)資料
型號: VNS3NV04DTR-E
廠商: 意法半導(dǎo)體
英文描述: OMNIFET II fully autoprotected Power MOSFET
中文描述: OMNIFET二充分autoprotected功率MOSFET
文件頁數(shù): 6/21頁
文件大?。?/td> 311K
代理商: VNS3NV04DTR-E
Electrical specifications
VNS3NV04D-E
6/21
2
Electrical specifications
Figure 3.
Current and voltage conventions
2.1
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
DRAIN 1
INPUT 1
SOURCE 2
I
IN1
V
IN1
INPUT 2
I
IN2
SOURCE 1
DRAIN 2
V
IN2
I
D2
I
D1
V
DS1
V
DS1
R
IN1
R
IN2
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DSn
Drain-Source Voltage (V
INn
=0V)
Internally clamped
V
V
INn
Input voltage
Internally clamped
V
I
INn
Input current
+/-20
mA
R
IN MINn
Minimum input series impedance
220
I
Dn
Drain current
Internally limited
A
I
Rn
Reverse DC output current
-5.5
A
V
ESD1
Electrostatic discharge (R=1.5K
, C=100pF)
4000
V
V
ESD2
Electrostatic discharge on output pins only (R=330
,
C=150pF)
16500
V
P
tot
Total dissipation at T
c
=25°C
4
T
j
Operating junction temperature
Internally limited
°C
T
c
Case operating temperature
Internally limited
°C
T
stg
Storage temperature
-55 to 150
°C
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