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參數(shù)資料
| 型號： | VN770P |
| 廠商： | 意法半導體 |
| 英文描述： | Quad Smart Power Solid State Relay For Complete H-Bridge Configurations(應用于完整H橋結構的四路智能功率固態(tài)繼電器) |
| 中文描述： | 四智能功率固態(tài)繼電器完整的H -橋配置（應用于完整?橋結構的四路智能功率固態(tài)繼電器） |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 95K |
| 代理商： | VN770P |
PROTECTION CIRCUITS
DUALHIGH SIDE SWITCH
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a a smallresistor betweenpin 2 (GND) and
ground. The suggested resistance value is about
150
. In any case the maximumvoltage drop on
this resistor should not overcome 0.5V.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of V
ih
, V
il
and
V
stat
.
LOW SIDE SWITCHES
The devices integrate:
-
OVERVOLTAGE
CLAMP
internally set at 42V, along with the rugged
avalanche
characteristics
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
PROTECTION:
of
the
Power
inductive loads.
-
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chiptemperatureand are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150
o
C. The device is automatically
restarted when the chip temperature falls
below 135
o
C.
-
STATUS FEEDBACK: In the case of an
overtemperature
fault
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100
.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of these devices are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a smallincrease inR
DS(on)
).
condition,
a
Status
TRUTH TABLE
(for Dual high-sideswitch only)
INPUT 1
INPUT 2
SOURCE 1 SOURCE 2
DIAGNOSTIC
Normal Operation
L
H
L
H
L
H
H
L
L
H
L
H
L
H
H
L
H
H
H
H
Under-voltage
X
X
L
L
H
Thermal Shutdown
Channel 1
Channel 2
Channel 1
H
X
L
X
L
X
H
X
L
L
Open Load
H
L
X
L
H
L
X
L
L
L
Channel 2
X
L
H
L
X
L
H
L
L
L
Output Shorted to V
CC
Channel 1
H
L
X
L
H
H
X
L
L
L
Channel 2
X
L
H
L
X
L
H
H
L
L
NOTE: The low-side switches have the fault feedback which canbe detected by monitoringthe voltage at the input pins.
L =Logic LOW, H = Logic HIGH, X = Don’t care
VN770P
4/11
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| VN771P | Quad Smart Power Solid State Relay For Complete H-Bridge Configurations(應用于完整H橋結構的四路智能功率固態(tài)繼電器) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VN770P13TR | 功能描述:功率驅(qū)動器IC Quad 40V 9A Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN770PTR-E | 功能描述:功率驅(qū)動器IC QUAD 40V 9A HI-SIDE RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN771 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS |
| VN771K | 功能描述:電源開關 IC - 配電 Quad 40V 9A Hi-Side RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VN771K13TR | 功能描述:功率驅(qū)動器IC Quad 40V 9A Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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