參數(shù)資料
型號: VN771P
廠商: 意法半導(dǎo)體
英文描述: Quad Smart Power Solid State Relay For Complete H-Bridge Configurations(應(yīng)用于完整H橋結(jié)構(gòu)的四路智能功率固態(tài)繼電器)
中文描述: 四智能功率固態(tài)繼電器完整的H -橋配置(應(yīng)用于完整?橋結(jié)構(gòu)的四路智能功率固態(tài)繼電器)
文件頁數(shù): 1/11頁
文件大?。?/td> 95K
代理商: VN771P
VN771P
QUAD SMART POWER SOLID STATE RELAY
FOR COMPLETE H BRIDGE CONFIGURATIONS
September 1998
SO-28
TYPE
R
DS(on)
*
0.135
I
OUT
V
CC
VN771P
* Total resistance of one side in bridge configuration
14 A
26 V
I
SUITED ASLOW VOLTAGEBRIDGE
I
LINEAR CURRENT LIMITATION
I
VERY LOW STAND-BY POWER
DISSIPATION
I
SHORTCIRCUIT PROTECTED
I
STATUS FLAG DIAGNOSTICS
I
OPEN DRAIN DIAGNOSTICS OUTPUT
I
INTEGRATEDCLAMPING CIRCUITS
I
UNDER-VOLTAGE PROTECTION
I
ESDPROTECTION
DESCRIPTION
The VN771P is a device formed by three
monolithic chips housed in a standard SO28
package: a double high side and two low side
switches. Both the double high side and low side
switches are made using STMicroelectronics
VIPower technology. This device is suitable to
drive a DC motor in a bridge configurationas well
as to be used as a quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-down to protect the
chip from over temperature and short circuit,
status output to provide indication for open load
in off and on state, overtemperature conditions
and stuck-on to V
CC
. The low side switches are
two OMNIFET types (fully autoprotected Power
MOSFET in VIPower
technology). They have
built-in thermalshut-down, linear current limitation
and overvoltage clamping. Fault feedback for
thermal
intervention
can
monitoringthe voltage at the input pin.
DUALHIGH-SIDE SWITCH
From the falling edge of the input signal, the
status output, initially low
condition
(overtemperature
on-state), will go back to a high state with a
different delay in case of overtemperature(tpovl)
and in case of open open load (
tpol
) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
be
detected
by
to signal a fault
or
open
load
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140
o
C. When this temperature returns to 125
o
C
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
locatedinside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (V
demag
)
of -18V. This function allows to greatly reduces
the power dissipationaccordingto the formula:
P
dem
=0.5
L
load
(I
load
)
2
[(V
CC
+V
demag
)/V
demag
]
f
where f = switching frequencyand
V
demag
= demagnetizationvoltage.
In this device if the GND pin is disconnected,with
V
CC
not exceeding 16V, both channel will switch
off.
LOW-SIDE SWITCHES
During
normal
operation, the
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
iss
) flows into the Input pin in order to
supply the internal circuitry.
Input
pin
is
1/11
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