參數(shù)資料
型號(hào): VN770
廠商: 意法半導(dǎo)體
英文描述: INDUCTOR 1.8UH 290MA 1210 10%
中文描述: 四智能功率固態(tài)繼電器完整H橋配置
文件頁數(shù): 1/10頁
文件大?。?/td> 87K
代理商: VN770
VN770
QUAD SMART POWER SOLID STATE RELAY
FOR COMPLETE H-BRIDGE CONFIGURATIONS
October 1998
SO-28
TYPE
R
DS(on)
*
0.240
I
OUT
V
CC
VN770
* Total resistance of one side in bridge configuration
9 A
26 V
I
IDEAL AS A LOWVOLTAGEBRIDGE
I
VERY LOW STAND-BY POWER
DISSIPATION
I
OVER-CURRENT PROTECTED
I
STATUS FLAG DIAGNOSTICS ON UPPER
SIDE
I
OPEN DRAIN DIAGNOSTICS OUTPUT
I
UNDER-VOLTAGE PROTECTION
I
SUITABLE AS QUAD SWITCH
DESCRIPTION
The VN770 is
monolithic chips housed in a standard SO-28
package: a double high side and two Power
MOSFETs. The double high side are made using
STMicroelectronics VIPower technology; Power
MOSFETs are made by using the new advanced
strip lay-out technology.This device is suitable to
drive a DC motor in a bridge configurationas well
as to be used as a quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-down to protect the
chip from over temperature and short circuit,
status output to provide indication for open load
in off and on state, overtemperature conditions
and stuck-onto V
CC
.
DUALHIGH-SIDE SWITCH
From the falling edge of the input signal, the
status output, initially low
condition
(overtemperature
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (
tpol
) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
a
device formed by
three
to signal a fault
or
open
load
MOS off at a minimum junction temperature of
140
o
C. When this temperature returns to 125
o
C
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
locatedinside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (V
demag
)
of -18V. This function allows to greatly reduces
the power dissipationaccordingto the formula:
P
dem
=0.5
L
load
(I
load
)
2
[(V
CC
+V
demag
)/V
demag
]
f
where f = switching frequencyand
V
demag
= demagnetizationvoltage.
In this device if the GND pin is disconnected,with
V
CC
not exceeding 16V, both channel will switch
off.
Power MOSFETs
During
normal
operation, the
electrically connected to the gate of the internal
power MOSFET. The devices can be used as a
switch from DC to veryhigh frequency.
Input
pin
is
1/10
相關(guān)PDF資料
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VN771 Quad Smart Power Solid State Relay For Complete H-Bridge Configurations(應(yīng)用于完整H橋結(jié)構(gòu)的四路智能功率固態(tài)繼電器)
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