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參數(shù)資料
| 型號： | VN770 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | INDUCTOR 1.8UH 290MA 1210 10% |
| 中文描述： | 四智能功率固態(tài)繼電器完整H橋配置 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 87K |
| 代理商： | VN770 |
PROTECTION CIRCUITS
DUALHIGH SIDE SWITCH
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a a smallresistor betweenpin 2 (GND) and
ground. The suggested resistance value is about
150
. In any case the maximumvoltage drop on
this resistor should not overcome 0.5V.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of V
ih
, V
il
and
V
stat
.
TRUTH TABLE
(for Dual high-sideswitch only)
INPUT 1
INPUT 2
SOURCE 1 SOURCE 2
DIAGNOSTIC
Normal Operation
L
H
L
H
L
H
H
L
L
H
L
H
L
H
H
L
H
H
H
H
Under-voltage
X
X
L
L
H
Thermal Shutdown
Channel 1
Channel 2
Channel 1
H
X
L
X
L
X
H
X
L
L
Open Load
H
L
X
L
H
L
X
L
L
L
Channel 2
X
L
H
L
X
L
H
L
L
L
Output Shorted to V
CC
Channel 1
H
L
X
L
H
H
X
L
L
L
Channel 2
X
L
H
L
X
L
H
H
L
L
NOTE: The low-side switches have the fault feedback which canbe detected by monitoringthe voltage at the input pins.
L =Logic LOW, H = Logic HIGH, X = Don’t care
ABSOLUTE MAXIMUM RATING
(-40
o
C < T
j
< 150
o
C)
HIGH SIDESWITCH
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Brekdown Voltage
40
V
I
OUT
Output Current (continuous)
9
A
I
R
Reverse Output Current
-9
A
I
IN
Input Current
±
10
mA
-V
CC
Reverse Supply Current
-4
V
I
STAT
Status Current
±
10
mA
V
ESD
Electrostatic Discharge (C = 100 pF, R = 1.5 K
)
Power Dissipation @ T
c
= 25
o
C
2000
V
P
tot
Internally Limited
W
T
j
Junction Operating Temperature
-40 to 150
o
C
T
stg
Storage Temperature
-55 to 150
o
C
VN770
4/10
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|---|---|
| VN770K | 功能描述:功率驅(qū)動器IC Quad 40V 9A Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN770K113TR | 制造商:STMicroelectronics 功能描述: |
| VN770K13TR | 功能描述:功率驅(qū)動器IC Quad 40V 9A Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN770K-E | 功能描述:功率驅(qū)動器IC QUAD 40V 9A HI-SIDE RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN770KP-E | 功能描述:電源開關(guān) IC - 配電 Quad Smart Power 225mOhm 9A 36V VCC RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
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