參數(shù)資料
型號(hào): VN5770AK-E
廠商: 意法半導(dǎo)體
英文描述: Quad smart power solid state relay for complete H bridge configurations
中文描述: 四完整的智能功率H橋配置固態(tài)繼電器
文件頁(yè)數(shù): 7/31頁(yè)
文件大?。?/td> 429K
代理商: VN5770AK-E
VN5770AK-E
Maximum ratings
7/31
2
Maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in
Section 2.1: Absolute
maximum ratings
for extended periods may affect device reliability. Refer also to the
STMicroelectronics SURE Program and other relevant quality document.
2.1
Absolute maximum ratings
Table 3.
Table 4.
Thermal Data
Symbol
Parameter
Max value
Unit
R
thj-case
Thermal Resistance Junction-lead
(High-side switch)
10
°C/W
R
thj-case
Thermal Resistance Junction-lead
(Low-side switch)
7
°C/W
R
thj-amb
Thermal Resistance Junction-ambient.
See
Figure 38
°C/W
Dual high side switch
Symbol
Parameter
Value
Unit
V
CC
DC supply voltage
41
V
-V
CC
Reverse DC supply voltage
0.3
V
- I
GND
DC reverse ground pin current
200
mA
I
OUT
DC output current
Internally limited
A
- I
OUT
Reverse DC output current
-12
A
I
IN
DC input current
-1 to 10
mA
I
CSD
DC current sense disable input current
-1 to 10
mA
V
CSENSE
Current sense maximum voltage
V
CC
-41
+V
CC
V
V
E
MAX
Maximum switching energy (single pulse)
(L=3.7mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150oC; I
OUT
= I
limL
(Typ.)
)
Electrostatic Discharge (Human Body Model: R=1.5K
;
C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- V
CC
32
mJ
V
ESD
4000
2000
5000
5000
V
V
V
V
V
ESD
Charge device model (CDM-AEC-Q100-011)
750
V
T
j
Junction operating temperature
-40 to 150
°C
T
stg
Storage temperature
-55 to 150
°C
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