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參數(shù)資料
| 型號： | VN2222 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓220V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS（擊穿電壓220，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 27K |
| 代理商： | VN2222 |
7-203
7
VN2222
VN2224
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
* Distance of 1.6 mm from case for 10 seconds.
Order Number / Package
BV
DSS
/
BV
DGS
220V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-92
20-Pin C-Dip
1.25
1.25
5.0A
–
VN2222NC
240V
5.0A
VN2224N3
–
Applications
I
I
Motor controls
I
I
Converters
I
I
Amplifiers
I
I
Switches
I
I
Power supply circuits
I
I
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Features
I
I
Free from secondary breakdown
I
I
Low power drive requirement
I
I
Ease of paralleling
I
I
Low C
ISS
and fast switching speeds
Excellent thermal stability
I
I
I
I
Integral Source-Drain diode
I
I
High input impedance and high gain
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Note: See Package Outline section for dimensions.
1
10
2
3
4
5
6
7
8
9
20
11
19
18
17
16
15
14
13
12
top view
S
S
S
S
S
NC
G1
D1
G2
D2
G3
D3
G4
D4
S
NC
S
S
S
S
TO-92
S G D
20-pin Ceramic DIP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VN2224 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN2224N3 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN2406D | N-Channel 240-V (D-S) MOSFETs |
| VN2406D | N-Channel Enhancement-Mode MOSFET(最小漏源擊穿電壓240V，夾斷電流1.12A的N溝道增強(qiáng)型MOSFET晶體管) |
| VN2406LZL1 | TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 200MA I(D) | TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN2222KM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement Mode |
| VN2222L | 功能描述:MOSFET 60V 0.23A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2222LL | 功能描述:MOSFET 60V 150mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2222LL/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 150 mAmps， 60 Volts |
| VN2222LLG | 功能描述:MOSFET 60V 150mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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