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參數(shù)資料
| 型號(hào)： | VN2010L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓200V，夾斷電流0.19A的N溝道增強(qiáng)型MOSFET) |
| 中文描述： | N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓為200V，夾斷電流0.19A的N溝道增強(qiáng)型MOSFET的） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 71K |
| 代理商： | VN2010L |
VN2010L/BS107
2
Siliconix
P-38283—Rev. B, 15-Aug-94
Specifications
a
Limits
VN2010L
BS107
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
220
200
200
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.2
0.8
1.8
0.8
3
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
10
nA
V
DS
= 0 V, V
GS
=
15 V
10
Drain Leakage Current
I
DSX
V
DS
= 70 V, V
GS
= 0.2 V
1
V
DS
= 130 V, V
GS
= 0 V
0.03
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V
1
T
J
= 125 C
100
On-State Drain Current
c
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
0.7
0.1
A
V
GS
= 2.8 V, I
D
= 0.02 A
6
28
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.05 A
6
10
T
J
= 125 C
11
20
Forward Transconductance
c
g
fs
V
DS
= 15 V, I
D
= 0.1 A
180
125
Common Source
Output Conductance
c
g
os
V
DS
= 15 V, I
D
= 0.05 A
0.15
mS
Dynamic
Input Capacitance
C
iss
35
60
Output Capacitance
C
oss
V
DS
=25 V, V
GS
= 0 V, f = 1 MHz
9
30
pF
Reverse Transfer Capacitance
C
rss
1
15
Switching
d
Turn-On Time
t
ON
25
0 1
0.1
5
20
ns
Turn-Off Time
t
OFF
21
30
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VNDQ20
2%.
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