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參數(shù)資料
| 型號： | VN2010L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓200V，夾斷電流0.19A的N溝道增強(qiáng)型MOSFET) |
| 中文描述： | N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓為200V，夾斷電流0.19A的N溝道增強(qiáng)型MOSFET的） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 71K |
| 代理商： | VN2010L |
VN2010L/BS107
Siliconix
P-38283—Rev. B, 15-Aug-94
1
N-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
VN2010L
200
10 @ V
GS
= 4.5 V
0.8 to 1.8
0.19
BS107
28 @ V
GS
= 2.8 V
0.8 to 3
0.12
Features
Benefits
Applications
Low On-Resistance: 6
Secondary Breakdown Free: 220 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
Telephone Mute Switches, Ringer Circuits
Power Supply, Converters
Motor Control
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
VN2010L
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
BS107
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Parameter
Symbol
VN2010L
BS107
Unit
Drain-Source Voltage
V
DS
200
200
V
Gate-Source Voltage
V
GS
30
25
Continuous Drain Current (T
J
= 150 C)
T
A
= 25 C
I
D
0.19
0.12
T
A
= 100 C
0.12
A
Pulsed Drain Current
a
I
DM
0.8
Power Dissipation
T
A
= 25 C
P
D
0.8
0.5
W
T
A
= 100 C
0.32
Maximum Junction-to-Ambient
R
thJA
156
250
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70215.
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