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| 型號(hào)： | VN2010L |
| 英文描述： | N-Channel Enhancement-Mode MOS Transistors |
| 中文描述： | N溝道增強(qiáng)型MOS晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | VN2010L |
VN2010L/BS107
Vishay Siliconix
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-1
N-Channel 200-V (D-S) MOSFETs
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
VN2010L
10 @ V
GS
= 4.5 V
0.8 to 1.8
0.19
BS107
200
28 @ V
GS
= 2.8 V
0.8 to 3
0.12
Low On-Resistance: 6
Secondary Breakdown Free: 220 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
Telephone Mute Switches, Ringer Circuits
Power Supply, Converters
Motor Control
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
VN2010L
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
BS107
Device Marking
Front View
“S” VN
2010L
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
Device Marking
Front View
“S” BS
107
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
Parameter
Symbol
VN2010L
BS107
Unit
Drain-Source Voltage
V
DS
200
200
Gate-Source Voltage
V
GS
30
25
V
T
A
= 25 C
0.19
0.12
Continuous Drain Current
(T
J
= 150 C)
T
A
= 100 C
I
D
0.12
A
Pulsed Drain Current
a
I
DM
0.8
T
A
= 25 C
0.8
0.5
Power Dissipation
T
A
= 100 C
P
D
0.32
W
Thermal Resistance, Junction-to-Ambient
R
thJA
156
250
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
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