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參數(shù)資料
| 型號： | VFT30-28 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-123 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 2.5AI（四）|的SOT - 123 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 15K |
| 代理商： | VFT30-28 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25°C
SYMBOL
V
(BR)DSS
V
GS
= 0 V I
DS
= 5.0 mA
I
DSS
V
DS
= 28 V V
GS
= 0 V
I
GSS
V
DS
= 0 V V
GS
= 40 V
V
GS
V
DS
= 10 V I
D
= 25 mA
G
FS
V
DS
= 10 V I
D
= 250 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
60
---
UNITS
V
---
---
---
2.0
mA
μ
A
V
---
---
1.0
1.0
---
6.0
250
---
---
mS
C
iss
C
oss
C
rss
V
GS
= 28 V V
DS
= 0 V F = 1.0 MHz
22
17
3.0
pF
P
G
η
D
V
DD
= 28 V I
DQ
= 25 mA P
OUT
= 30 W
f = 175 MHz
13
50
14
60
dB
%
VHF POWER MOSFET
N-Channel Enhancement Mode
VFT30-28
DESCRIPTION:
The
VFT30-28
is Designed for
General Purpose Class AB Power
Amplifier Applications up to 175 MHz.
FEATURES:
P
G
= 14 dB Typ. at 30 W /175MHz
10:1 Load VSWR
Capability
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
θ
JC
2.5 A
65 V
65 V
± 40 V
97 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.8 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10703
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
S
G
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VFT30-50 | VHF POWER MOSFET N-Channel Enhancement Mode |
| VFT300-28 | VHF POWER MOSFET Silicon N-Channel Enhancement Mode |
| VFT300-50 | VHF POWER MOSFET N-Channel Enhancement Mode |
| VFT45-28 | VHF POWER MOSFET N-Channel Enhancement Mode |
| VFT5-28 | VHF POWER MOSFET N-Channel Enhancement Mode |
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