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參數(shù)資料
| 型號： | VFT300-50 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF POWER MOSFET N-Channel Enhancement Mode |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | VFT300-50 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
V
(BR)DSS
V
GS
= 0 V I
DS
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
UNITS
V
I
DSS
V
DS
= 28 V V
GS
= 0 V
5.0
mA
I
GSS
V
DS
= 0 V V
GS
= 20 V
1.0
m
A
V
GS
V
DS
= 10 V I
D
= 100 mA
1.0
5.0
V
V
DS
V
GS
= 10 V I
D
= 10 A
1.5
V
G
FS
V
DS
= 10 V I
D
= 5 A
3500
mS
C
iss
C
oss
C
rss
V
GS
= 28 V V
DS
= 0 V F = 1.0 MHz
375
188
26
pF
G
PS
h
D
V
DD
= 28 V I
DQ
= 2 x 250 mA P
OUT
= 300 W
f = 175 MHz
12
50
14
55
dB
%
VHF POWER MOSFET
Silicon N-Channel Enhancement Mode
VFT300-28
DESCRIPTION:
The
VFT300-28
is Designed for
Wideband High Power VHF Amplifier
Applications operating up to 250 MHz.
FEATURES:
P
G
= 14 dB Typical at 175 MHz
h
D
= 55% Typ. at P
OUT
= 300 Watts
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
q
JC
16 A
65 V
65 V
±
40 V
300 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
0.6
O
C/W
PACKAGE STYLE .400 BAL FLG (D)
ORDER CODE: ASI10707
MINIMUM
inches / mm
.380 / 9.65
.580 / 14.73
B
C
D
E
F
G
H
A
MAXIMUM
inches / mm
.620 / 15.75
.390 / 9.91
DIM
K
L
M
I
J
.003 / 0.08
.060 / 1.52
.100 / 2.54
.007 / 0.18
.070 / 1.78
.115 / 2.92
.230 / 5.84
.407 / 10.34
N
.850 / 21.59
.870 / 22.10
.220 / 5.59
.230 / 5.84
.435 / 11.05
.395 / 10.03
1.335 / 33.91
1.345 / 34.16
.210 / 5.33
.125 / 3.18
.080x45°
A
B
F
G
H
I
J
K
L
M
(4X).060 R
.1925
D
C
E
FULL R
N
1.090 / 27.69
1.105 / 28.07
D
D
G
G
Sources are connected
to flange
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|---|---|
| VFT300-50_07 | 制造商:ASI 制造商全稱:ASI 功能描述:VHF POWER MOSFET |
| VFT30-28 | 制造商:ASI 制造商全稱:ASI 功能描述:N-Channel Enhancement Mode VHF POWER MOSFET |
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