參數(shù)資料
型號(hào): VFT5-28
廠商: ADVANCED SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: VHF POWER MOSFET N-Channel Enhancement Mode
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 18K
代理商: VFT5-28
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
DSS
I
D
= 5 mA
I
DSS
V
DS
= 28 V
I
GSS
V
DS
= 0 V
V
GS(th)
I
D
= 25 mA
g
fs
I
D
= 250 mA
NONE
TEST CONDITIONS
MINIMUM
60
TYPICAL MAXIMUM UNITS
V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
DS
= 10 V
1.0
1.0
6.0
mA
m
A
V
mS
1.0
80
C
iss
C
oss
C
rss
V
DS
= 28 V
V
GS
= 0 V
f = 1.0 MHz
9.0
7.0
1.0
pF
P
G
h
D
y
V
DD
= 50 V
F = 175 MHz
V
SWR
= 30:1
AT ALL PHASE
ANGLES
I
DQ
= 50 mA P
out
= 5.0 W
13
50
14
60
dB
%
NO DEGRADATION IN OUTPUT POWER
VHF POWER MOSFET
N-Channel Enhancement Mode
VFT5-28
PACKAGE STYLE .380 4L FLG
ASI ORDER CODE: ASI10701
DESCRIPTION:
The
ASI VFT5-28
is a N-Channel
Enhancement-Mode RF Power
MOSFET Designed for AM and FM
Power Amplifier Applications up to 250
MHz.
FEATURES INCLUDE:
P
G
= 14 dB Typical at 175 MHz
30:1 Load VSWR
Capability
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
V
DSS
V
GS
P
DISS
T
J
T
STG
q
JC
1.0 A
60 V
±
40 V
17.5 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
10
O
C/W
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.980 / 24.89
H
I
.160 / 4.06
.180 / 4.57
.280 / 7.11
DIM
.220 / 5.59
.785 / 19.94
.720 / 18.29
.230 / 5.84
.105 / 2.67
.085 / 2.16
J
.240 / 6.10
.255 / 6.48
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.730 / 18.54
S
S
D
G
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