參數(shù)資料
型號(hào)： VFT150-28
廠商： ADVANCED SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： VHF POWER MOSFET Channel Enhancement Mode
中文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 18K
代理商： VFT150-28
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
DSS
I
D
= 100 mA
I
DSS
V
DS
= 28 V
I
GSS
V
DS
= 0 V
V
GS(th)
I
D
= 100 mA
g
fs
I
D
= 5 A
NONE
TEST CONDITIONS
MINIMUM
60
TYPICAL
MAXIMUM
UNITS
V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
DS
= 10 V
5.0
mA
1.0
m
A
1.0
5.0
V
3500
mS
C
iss
C
oss
C
rss
V
DS
= 28 V
V
GS
= 0 V
f = 1.0 MHz
375
190
25
pF
P
G
h
D
V
DD
= 28 V
f = 175 MHz
V
SWR
= 10:1
AT ALL PHASE
ANGLES
I
DQ
= 250 mA P
out
= 150 W
8.5
50
10
60
dB
%
y
NO DEGRADATION IN OUTPUT POWER
VHF POWER MOSFET
N-Channel Enhancement Mode
VFT150-28
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI 10700
DESCRIPTION:
The
VFT150-28
is Designed for General
Purpose Class B Power Amplifier
Applications up to 175 MHz.
FEATURES:
P
G
= 10 dB Typical at 175 MHz
10:1 Load VSWR
Capability
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
V
DSS
V
GS
P
DISS
T
J
T
STG
q
JC
16 A
65 V
±
40 V
300 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
0.6
O
C/W
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
.495 / 12.57
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.230 / 5.84
H
I
.003 / 0.08
.090 / 2.29
.007 / 0.18
.110 / 2.79
DIM
K
L
J
.150 / 3.81
.980 / 24.89
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.280 / 7.11
S
S
D
G
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