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參數(shù)資料
| 型號： | V59C1512164QCF3I |
| 廠商： | PROMOS TECHNOLOGIES INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 0.45 ns, PBGA84 |
| 封裝： | ROHS COMPLIANT, MO-207, FBGA-84 |
| 文件頁數(shù)： | 51/76頁 |
| 文件大小： | 1192K |
| 代理商： | V59C1512164QCF3I |
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55
ProMOS TECHNOLOGIES
V59C1512(404/804/164)QC*I
V59C1512(404/804/164)QC*I Rev. 1.1 April 2008
Truth Tables
Func tion
CKE
CS
RAS CAS
WE
BA0
BA1
A12-A11 A10
A9 - A0
Notes
Previo us
Cycle
Curre nt
Cycle
(Extended) Mode Register Set
H
L
LLL
BA
OP Code
1, 2
Auto-Refresh
HH
L
H
X
1
Self-Refresh Entry
HL
L
H
X
1
Self-Refresh Exit
L
H
X
XXX
X
1
LH
H
X
1
Precharge all Banks
HH
L
H
L
X
H
X
1
Bank Activate
H
L
H
BA
Row Address
1, 2
Write
H
L
H
L
BA
Column
L
Column
1,2,3
Write with Auto-Precharge
H
L
H
L
BA
Column
H
Column
1,2,3
Read
H
L
H
L
H
BA
Column
L
Column
1,2,3
Read with Auto-Precharge
HH
L
H
L
H
BA
Column
H
Column
1,2,3
No Operation
HX
L
H
X
1
Device Deselect
H
X
H
X
XXX
X
1
Power Down Entry
HL
HX
X
XX
X
1,4
LH
H
Power Down Exit
LH
HX
X
XX
X
1,4
LH
H
1. All DDR2 SDRAM commands are defined by states of CS, WE, RAS, CAS, and CKE at the rising edge of the clock.
2. Bank addresses (BA0, BA1) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended)
Mode
Register.
3. Burst reads or writes at BL = 4 cannot be terminated. See sections “Reads interrupted by a Read” and “Writes inter-
rupted by a Write”.
4. The Power Down Mode does not perform any refresh operations. The duration of Power Down is therefore limited by
the refresh requirements.
5. The state of ODT does not affect the states decribed in this table. The ODT function is not available during Self
Refresh.
6. “X” means “H or L (but a defined logic level)”.
7. Operation that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM
must be powered down and then restartet through the specified initialization sequence before normal operation can
continue.
Command Truth Table
XX
Single Bank Precharge
HH
LL
H
L
X
L
X
BA
1, 2
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| V59C1512164QDJ25 | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 400MHz, Green Part 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 400MHz, Green Part |
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| V59C1512164QDJ25I | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, |
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| V59C1512164QDJ3I | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, |
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