參數(shù)資料
型號: V58C3643204SAT
廠商: Mosel Vitelic, Corp.
英文描述: HIGH PERFORMANCE 3.3 VOLT 2M X 32 DDR SDRAM 4 X 512K X 32
中文描述: 高性能3.3伏200萬× 32 DDR SDRAM的4 × 512k × 32的
文件頁數(shù): 5/12頁
文件大?。?/td> 278K
代理商: V58C3643204SAT
5
V58C3643204SAT Rev. 1.4 August 2001
MOSEL VITELIC
V58C3643204SAT
Auto Precharge Operation
The Auto Precharge operation can be issued by having column address A
8
high when a Read or Write com-
mand is issued. If A
10
is low when a Read or Write command is issued, then normal Read or Write burst op-
eration is executed and the bank remains active at the completion of the burst sequence. When the Auto
Precharge command is activated, the active bank automatically begins to precharge at the earliest possible
moment during the Read or Write cycle once t
RAS
(min) is satisfied.
Read with Auto Precharge
If a Read with Auto Precharge command is initiated, the DDR SDRAM will enter the precharge operation
N-clock cycles measured from the last data of the burst read cycle where N is equal to the CAS latency pro-
grammed into the device. Once the autoprecharge operation has begun, the bank cannot be reactivated until
the minimum precharge time (t
RP
) has been satisfied.
Read with Autoprecharge Timing
(CAS Latency = 2; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
D
0
D
1
D
2
D
3
Begin Autoprecharge
NOP
BA
R w/AP
NOP
NOP
NOP
NOP
NOP
BA
CK, CK
Command
DQS
DQ
t
RAS
(min)
t
RP
(min)
Earliest Bank A reactivate
T9
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