參數(shù)資料
型號(hào)： V54C365804VB
廠商： Mosel Vitelic, Corp.
英文描述： High Performance PC100/125MHz 3.3 Volt 8M X 8 Synchronous DRAM(3.3V高性能pc100/125MHz 8Mx8同步動(dòng)態(tài)RAM)
中文描述： 高性能PC100/125MHz 3.3伏8米× 8同步DRAM（3.3V的高性能pc100/125MHz 8Mx8同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 1/54頁(yè)
文件大?。?/td> 457K
代理商： V54C365804VB
MOSEL V ITELIC
1
V54C365804VB
HIGH PERFORMANCE PC100/125MHz
3.3 VOLT 8M X 8 SYNCHRONOUS DRAM
4 BANKS X 2Mbit X 8
V54C365804VB Rev. 1.1 February 1999
PRELIMINARY
8PC
8
10
System Frequency (f
CK
)
125 MHz
125 MHz
100 MHz
Clock Cycle Time (t
CK3
)
8 ns
8 ns
10 ns
Clock Access Time (t
AC3
) CAS Latency = 3
6 ns
7 ns
7 ns
Clock Access Time (t
AC2
) CAS Latency = 2
6 ns
7 ns
8 ns
Features
I
4 banks x 2Mbit x 8 organization
I
High speed data transfer rates up to 125 MHz
I
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
I
Single Pulsed RAS Interface
I
Data Mask for Read/Write Control
I
Four Banks controlled by BA0 & BA1
I
Programmable CAS Latency: 2, 3, 4
I
Programmable Wrap Sequence: Sequential or
Interleave
I
Programmable Burst Length:
1, 2, 4, 8 and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
I
Multiple Burst Read with Single Write Operation
I
Automatic and Controlled Precharge Command
I
Random Column Address every CLK (1-N Rule)
I
Suspend Mode and Power Down Mode
I
Auto Refresh and Self Refresh
I
Refresh Interval: 4096 cycles/64 ms
I
Available in 54 Pin 400 mil TSOP-II
I
LVTTL Interface
I
Single +3.3 V
±
0.3 V Power Supply
I
-8PC version for PC 100 application.
(V54C365804VBT8PC)
Description
The V54C365804VB is a four bank Synchronous
DRAM organized as 4 banks x 2Mbit x 8. The
V54C365804VB achieves high speed data transfer
rates up to 125 MHz by employing a chip architec-
ture that prefetches multiple bits and then synchro-
nizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
125 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
Temperature
Mark
T
8PC
8
10
Std.
L
0
°
C to 70
°
C
Blank
相關(guān)PDF資料
PDF描述
V54C365804VC HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
V54C365804VD HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
V551HA40 Varistor Products - High Energy Industrial
V55C2128164VB 128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
V55C2128164VT 128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
V54C365804VC 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
V54C365804VD 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
V5-5/RK 4-0.3/0.3/0.3 制造商:TURCK Inc 功能描述:Cordset, Splitter, M12 Female Straight x 3, 4 Wire, 5m, PVC, Yellow, U0986-00
V5-5/RK 4-1/1/1 制造商:TURCK Inc 功能描述:Cordset, Splitter, M12 Female Straight x 3, 4 Wire, 5m, PVC, Yellow, U-16415
V5509 制造商:Assmann Electronics Inc 功能描述:Old Part V5509^ASSMANN
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