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參數(shù)資料
| 型號： | V54C365404VD |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 16M X 4 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 4 |
| 中文描述： | 高性能143/133/125 MHz的3.3伏16米x 4同步DRAM 4銀行X的4Mb × 4 |
| 文件頁數(shù)： | 1/54頁 |
| 文件大?。?/td> | 799K |
| 代理商： | V54C365404VD |
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MOSEL VITELIC
1
V54C365404VD(L)
HIGH PERFORMANCE 143/133/125 MHz
3.3 VOLT 16M X 4 SYNCHRONOUS DRAM
4 BANKS X 4Mbit X 4
V54C365404VD(L) Rev. 0.9 September 2001
PRELIMINARY
7
75
8PC
8
System Frequency (f
CK
)
143 MHz
133 MHz
125 MHz
125 MHz
Clock Cycle Time (t
CK3
)
7 ns
7.5 ns
8 ns
8 ns
Clock Access Time (t
AC3
) CAS Latency = 3
5.4 ns
5.4 ns
6 ns
7 ns
Clock Access Time (t
AC2
) CAS Latency = 2
5.5 ns
6 ns
6 ns
7 ns
Features
I
4 banks x 4Mbit x 4 organization
I
High speed data transfer rates up to 143 MHz
I
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
I
Single Pulsed RAS Interface
I
Data Mask for Read/Write Control
I
Four Banks controlled by BA0 & BA1
I
Programmable CAS Latency: 2, 3
I
Programmable Wrap Sequence: Sequential or
Interleave
I
Programmable Burst Length:
1, 2, 4, 8 and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
I
Multiple Burst Read with Single Write Operation
I
Automatic and Controlled Precharge Command
I
Random Column Address every CLK (1-N Rule)
I
Suspend Mode and Power Down Mode
I
Auto Refresh and Self Refresh
I
Refresh Interval: 4096 cycles/64 ms
I
Available in 54 Pin 400 mil TSOP-II
I
LVTTL Interface
I
Single +3.3 V
±
0.3 V Power Supply
Description
The V54C365404VD(L) is a four bank Synchro-
nous DRAM organized as 4 banks x 4Mbit x 4. The
V54C365404VD(L) achieves high speed data trans-
fer rates up to 143 MHz by employing a chip archi-
tecture that prefetches multiple bits and then
synchronizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
143 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
Temperature
Mark
T
7
75
8PC
8
Std.
L
0
°
C to 70
°
C
Blank
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V54C365804VC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8 |
| V54C365804VD | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8 |
| V5-5/RK 4-0.3/0.3/0.3 | 制造商:TURCK Inc 功能描述:Cordset, Splitter, M12 Female Straight x 3, 4 Wire, 5m, PVC, Yellow, U0986-00 |
| V5-5/RK 4-1/1/1 | 制造商:TURCK Inc 功能描述:Cordset, Splitter, M12 Female Straight x 3, 4 Wire, 5m, PVC, Yellow, U-16415 |
| V5509 | 制造商:Assmann Electronics Inc 功能描述:Old Part V5509^ASSMANN |
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