參數資料
型號: V54C365164VEF6
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
封裝: LEAD FREE, MO-210, FBGA-60
文件頁數: 47/54頁
文件大?。?/td> 694K
代理商: V54C365164VEF6
51
V54C365(16/80/40)4VE Rev. 1.1 January 2005
ProMOS TECHNOLOGIES
V54C365(16/80/40)4VE
Clock Enable (CKE) Truth Table:
Abbreviations:
RA = Row Address
BS = Bank Address
CA = Column Address
AP = Auto Precharge
Notes for SDRAM function truth table:
1. Current State is state of the bank determined by BS. All entries assume that CKE was active (HIGH) during the preceding clock cycle.
2. Illegal to bank in specified state; Function may be legal in the bank indicated by BS, depending on the state of that bank.
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
4. NOP to bank precharging or in Idle state. May precharge bank(s) indicated by BS (andAP).
5. Illegal if any bank is not Idle.
6. CKE Low to High transition will re-enable CLK and other inputs asynchronously. A minimum setup time must be satisfied before any
command other than EXIT.
7. Power-Down and Self-Refresh can be entered only from the All Banks Idle State.
8. Must be legal command as defined in the SDRAM function truth table.
STATE(n)
CKE
n-1
CKE
nCS
RAS
CAS
WE
Addr
ACTION
Self-Refresh6
H
L
X
H
L
X
H
L
X
H
L
X
H
L
X
H
L
X
INVALID
EXIT Self-Refresh, Idle after tRC
ILLEGAL
NOP (Maintain Self-Refresh)
Power-Down
H
L
X
H
L
X
H
L
X
H
L
X
H
L
X
H
L
X
INVALID
EXIT Power-Down, > Idle.
ILLEGAL
NOP (Maintain Low-Power Mode)
All. Banks
Idle
7
H
L
H
L
X
H
L
X
H
L
X
H
L
H
L
X
H
L
X
H
L
X
Refer to the function truth table
Enter Power- Down
ILLEGAL
Enter Self-Refresh
ILLEGAL
NOP
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