參數(shù)資料
型號: V54C365164VEF6
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
封裝: LEAD FREE, MO-210, FBGA-60
文件頁數(shù): 17/54頁
文件大?。?/td> 694K
代理商: V54C365164VEF6
24
V54C365(16/80/40)4VE Rev.1.1 January 2005
ProMOS TECHNOLOGIES
V54C365(16/80/40)4VE
5. Burst Write Operation
(Burst Length = 4, CAS latency = 2, 3)
6.1 Write Interrupted by a Write
(Burst Length = 4, CAS latency = 2, 3)
COMMAND
NOP
WRITE A
NOP
I/O’s
DIN A0
DIN A1
DIN A2
DIN A3
NOP
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
Extra data is ignored after
The first data element and the Write
are registered on the same clock edge.
termination of a Burst.
don’t care
COMMAND
NOP
WRITE A
WRITE B
NOP
I/O’s
DIN A0
DIN B0
DIN B1
DIN B2
NOP
DIN B3
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
1 Clk Interval
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