- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359324 > V53C816H (Mosel Vitelic, Corp.) 512K X 16 FAST PAGE MODE CMOS DYNAMIC RAM PDF資料下載
參數(shù)資料
| 型號： | V53C816H |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 512K X 16 FAST PAGE MODE CMOS DYNAMIC RAM |
| 中文描述： | 為512k × 16快速頁面模式的CMOS動態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 16/18頁 |
| 文件大?。?/td> | 213K |
| 代理商： | V53C816H |
16
V53C816H Rev. 1.3 February 1999
MOSEL V ITELIC
V53C816H
any data stored in the output latches. A WE low lev-
el can also disable the output drivers when CAS is
low. During a Write cycle, if WE goes low at a time
in relationship to CAS that would normally cause the
outputs to be active, it is necessary to use OE to dis-
able the output drivers prior to the WE low transition
to allow Data In Setup Time (t
DS
) to be satisfied.
Power-On
After application of the V
CC
supply, an initial
pause of 200
μ
s is required followed by a minimum
of 8 initialization cycles (any combination of cycles
containing a RAS clock). Eight initialization cycles
are required after extended periods of bias without
clocks (greater than the Refresh Interval).
During Power-On, the V
CC
current requirement of
the V53C816H is dependent on the input levels of
RAS and CAS. If RAS is low during Power-On, the
device will go into an active cycle and I
CC
will exhibit
current transients. It is recommended that RAS and
CAS track with V
CC
or be held at a valid V
IH
during
Power-On to avoid current surges.
Table 1. V53C816H Data Output
Operation for Various Cycle Types
Cycle Type
I/O State
Read Cycles
Data from Addressed
Memory Cell
CAS-Controlled Write
Cycle (Early Write)
High-Z
WE-Controlled Write
Cycle (Late Write)
OE Controlled. High
OE = High-Z I/Os
Read-Modify-Write Cycles
Data from Addressed
Memory Cell
Fast Page Mode Read
Data from Addressed
Memory Cell
Fast Page Mode Write
Cycle (Early Write)
High-Z
Fast Page Mode Read-
Modify-Write Cycle
Data from Addressed
Memory Cell
RAS-only Refresh
High-Z
CAS-before-RAS Refresh
Cycle
Data remains as in
previous cycle
CAS-only Cycles
High-Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V53C816H50 | 512K X 16 FAST PAGE MODE CMOS DYNAMIC RAM |
| V53C816H60 | 512K X 16 FAST PAGE MODE CMOS DYNAMIC RAM |
| V53C818H30 | HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
| V53C818H50 | HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
| V53C818H | HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V53C8256HP45 | 制造商:Mosel Vitelic Corporation 功能描述: |
| V53C864K10L | 制造商:VITELIC 功能描述: |
| V53C864K80L | 制造商:VITELIC 功能描述: |
| V5-4/RK 4-0.3/0.3/0.3 | 制造商:TURCK Inc 功能描述:Cordset, Splitter, M12 Female Straight x 3, 4 Wire, 4m, PVC, Yellow |
| V-5410EK | 制造商:Honeywell Sensing and Control 功能描述:V Basics |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。