參數(shù)資料
型號： V53C668H
廠商： Mosel Vitelic, Corp.
英文描述： High Performance 64K x 16 Bit EDO Page Mode Byte Write CMOS Dynamic RAM(高性能64Kx16EDO頁面模式可寫CMOS動態(tài)RAM)
中文描述： 高性能64K的× 16位EDO公司頁面模式字節(jié)寫的CMOS動態(tài)RAM（高性能64Kx16EDO頁面模式可寫的CMOS動態(tài)內(nèi)存）
文件頁數(shù)： 7/28頁
文件大?。?/td> 243K
代理商： V53C668H
MOSEL V ITELIC
V53C668H
7
V53C668H Rev. 1.1 February 1999
Notes:
1. I
CC
is dependent on output loading when the device output is selected. Specified I
CC
(max.) is measured with the
output open.
2.
I
CC
is dependent upon the number of address transitions. Specified I
CC
(max.) is measured with a maximum of two
transitions per address cycle in EDO Page Mode.
3. Specified V
IL
(min.) is steady state operating. During transitions, V
IL
(min.) may undershoot to –1.0 V for a period
not to exceed 20 ns. All AC parameters are measured with V
IL
(min.)
≥
V
SS
and V
IH
(max.)
≤
V
CC
.
4. t
RCD
(max.) is specified for reference only. Operation within t
RCD
(max.) limits insures that t
RAC
(max.) and t
CAA
(max.) can be met. If t
RCD
is greater than the specified t
RCD
(max.), the access time is controlled by t
CAA
and t
CAC
.
5.
Either t
RRH
or t
RCH
must be satisified for a Read Cycle to occur.
6.
Measured with a load equivalent to one TTL input and 50 pF.
7.
Access time is determined by the longest of t
CAA
, t
CAC
and t
CAP
.
8.
Assumes that t
RAD
≤
t
RAD
(max.). If t
RAD
is greater than t
RAD
(max.), t
RAC
will increase by the amount that t
RAD
ex-
ceeds t
RAD
(max.).
9.
Assumes that t
RCD
≤
t
RCD
(max.). If t
RCD
is greater than t
RCD
(max.), t
RAC
will increase by the amount that t
RCD
exceeds t
RCD
(max.).
10.
Assumes that t
RAD
≥
t
RAD
(max.).
11.
Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.) is specified as a reference
point only. If t
RAD
is greater than the specified t
RAD
(max.) limit, the access time is controlled by t
CAA
and t
CAC
.
12.
t
WCS
, t
RWD
, t
AWD
and t
CWD
are not restrictive operating parameters.
13.
t
WCS
(min.) must be satisfied in an Early Write Cycle.
14.
t
DS
and t
DH
are referenced to the latter occurrence of CAS or WE.
15.
t
T
is measured between V
IH
(min.) and V
IL
(max.). AC-measurements assume t
T
= 3 ns.
16.
Assumes a three-state test load (5 pF and a 380 Ohm Thevenin equivalent).
17.
An initial 200
μ
s pause and 8 RAS-containing cycles are required when exiting an extended period of bias without
clocks. An extended period of time without clocks is defined as one that exceeds the specified Refresh Interval.
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